SIMOX is one of the most promising SOI technologies.
SIMOX技术是最具有发展前途的SOI技术之一。
The thick SOI films were prepared by SIMOX technology and Si epitaxy process.
利用SIMOX技术和硅外延工艺制备了厚膜SOI材料。
H-gate devices were fabricated on SIMOX substrates with different thickness of BOX.
在埋氧化层厚度不同的SIMOX衬底上制备了H型栅结构器件。
During the past ten years and more, SIMOX applications have demonstrated and steadily identified.
过去十多年，SIMOX技术应用已得到证实。
The formation process of SIMOX structure during low temperature annealing are also discussed in the paper.
本文还讨论了退火期间SIMOX结构的形成过程。
The physical effects of high dose ion implantation are discussed. The formation process of SIMOX materials and their various applications are described.
讨论了高剂量注入的物理效应，介绍了利用高剂量氧注入硅合成SIMOX材料的物理过程以及SIMOX技术的多种应用。
Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.
研究了在改性注氧隔离（SIMOX）材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。
An implanter without ion mass analyzer was used to fabricate thin SOI materials by low energy and low dose water ions implantation instead of conventional SIMOX.
采用无质量分析器的离子注入机，以低能量低剂量注水的方式代替常规SIMOX注氧制备soi材料。
An implanter without ion mass analyzer was used to fabricate thin SOI materials by low energy and low dose water ions implantation instead of conventional SIMOX.
采用无质量分析器的离子注入机，以低能量低剂量注水的方式代替常规SIMOX注氧制备soi材料。
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