PNP epitaxial silicon transistor. Low frequency power amplifier.
PNP外延硅晶体管。低频功率放大器。
In 1977, he invented a silicon transistor that switches electronic signals in devices.
1977年，他曾经发明了能够在不同设备之间切换电子信号的硅晶体管。
The transistor is about 1, 000 times smaller in area than silicon-based transistors used in electronics today, Levy says.
利维表示，利用该技术制作的晶体管比目前使用的硅晶体管小1000倍。
Patterned crystallization of amorphous silicon (a-Si) on substrates of glass is very important for the fabrication of thin film transistor used in active matrix liquid crystal displays.
以玻璃为基底的非晶硅图形式结晶，对于研制用于矩阵液晶显示的薄膜半导体具有重要意义。
Hydrogenated silicon film attracts extensively attention due to its application on many kinds of microelectronic devices, such as infrared imaging system, solar cell and thin film transistor.
氢化硅薄膜由于在红外成像传感器、太阳能电池及薄膜晶体管等微电子器件中有着广泛应用前景而备受关注。
Meanwhile, basic factors about affecting new type silicon magneto transistor characteristic are also shown.
同时，给出影响新型硅磁敏三极管特性的基本因素。
An improved plan of silicon controlled rectifier (SCR) line type trigger is described in detail. Anew practical circuit of bipolar transistor trigger for high pulse repeat frequency is presented.
详细地介绍了可控硅整流器(SCR)线型触发器的改进型设计方案，提出了用于高脉冲重复频率的双极晶体管触发器的实用新电路。
Silicon insulated-gate bipolar transistor (IGBT) technology is progressing, becoming better and cheaper.
硅绝缘栅双极晶体管(IGBT)技术在进步，成为更好和更便宜。
In this paper, the structure, properties of polycrystalline silicon thin film transistor were explained, and its application in the active matrix liquid display device was described.
简要介绍了多晶硅薄膜晶体管的结构、器件特性以及在有源矩阵液晶显示器中的应用。
The first transistor, created at Bell Labs in 1947, was made of a slab of germanium, an element one spot below silicon in theperiodic table.
1947年，Bell实验室创造了世界上第一个晶体管，该晶体管当时就是用锗板来制备，锗这种元素元素周期表中位于硅的下方。
In a traditional full-custom ASIC design flow, the next step would be the laborious, expensive, and error-prone process of manual transistor layout required to translate the design to silicon.
在传统的全定制asic设计流程中，下一步将是艰苦的，昂贵的，容易出错的晶体管布局，布局需要把设计转化到具体的硅片上。
The process is compatible to the existing double poly-silicon self-aligned NPN transistor process, which can be used to fabricate high-performance complementary bipolar circuits.
该工艺与已有的双层多晶硅自对准NPN晶体管工艺相兼容，可用于制造高性能的互补双极电路。
In this paper, we reviewed several hotspots of LCD research, including Transparent LCD (TS-LCD), poly-silicon thin film transistor, liquid crystal on silicon (Lcos).
本文回顾了现阶段液晶显示器的几个研究热点，包括透反射液晶显示器、多晶硅薄膜晶体管技术及硅基液晶。
In addition, the buffer layer can mitigate parallel conduction issues between transistor devices and the silicon substrate.
此外，缓冲层可以减少晶体管之间的设备和硅衬底平行的传导问题。
The field effect transistor includes: a silicon body, a perimeter of the silicon body abutting a dielectric isolation;
所述场效应晶体管包括：硅体，所述硅体的周边邻接介质绝缘物；
In addition, the buffer layer addresses and mitigates lattice mismatches between the film relative to which the transistor is formed and the silicon substrate.
此外，缓冲层地址和缓解晶格薄膜之间的不匹配而相对形成晶体管和硅衬底上。
The silicon and oxide field effect transistor provided by the invention not only combines perovskite oxides and silicon electronics, but also has the functional characteristics.
本发明提供的硅和氧化物场效应管不仅把钙钛矿氧化物和硅电子学结合起来，具有功能特性。
The main product is zener diode series, schottky barrier diode series, Transistor series, MosFET series, controlled silicon series, IC series.
主要产品有稳压二极管系列、肖特基二极管系列、三极管系列、场效应管系列、可控硅系列、IC产品系列。
At the moment we use all the same steps to make a transistor as is done by the silicon industry.
目前我们采用与硅产业同样的步骤制造晶体管。
The invention discloses a lower grid electrode-based film transistor which comprises a grid electrode, a grid electrode insulating layer, and a micro-crystallization silicon layer;
本发明公开了一种下栅极式薄膜晶体管，包含栅极、栅极绝缘层以及微结 晶硅层。
The A1210-A1214 Hall-effect latches include the following on a single silicon chip: voltage regulator, Hall-voltage generator, small-signal amplifier, Schmitt trigger, and NMOS output transistor.
在A1210 - A 1214霍尔效应锁存包括一个单一的硅芯片上以下内容：稳压器，霍尔电压发生器，小信号放大器，施密特触发器和NMOS输出晶体管。
This paper aims at the research on drive technology of LTPS (Low Temperature Poly-Silicon) TFT (Thin Film Transistor) AM-OLEDs.
本文对低温多晶硅薄膜晶体管（TFT）AM-OLED的驱动技术进行了研究。
This paper aims at the research on drive technology of LTPS (Low Temperature Poly-Silicon) TFT (Thin Film Transistor) AM-OLEDs.
本文对低温多晶硅薄膜晶体管（TFT）AM-OLED的驱动技术进行了研究。
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