To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。
The main product is zener diode series, schottky barrier diode series, Transistor series, MosFET series, controlled silicon series, IC series.
主要产品有稳压二极管系列、肖特基二极管系列、三极管系列、场效应管系列、可控硅系列、IC产品系列。
The main product is zener diode series, schottky barrier diode series, Transistor series, MosFET series, controlled silicon series, IC series.
主要产品有稳压二极管系列、肖特基二极管系列、三极管系列、场效应管系列、可控硅系列、IC产品系列。
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