• The uniform sol gel derived silicon dioxide film was prepared under optimal conditions. DFVP was applied to etch this film. The photolithography patterns was obtained due to the different etch

    并将无显影气相光刻方法应用这种二氧化硅刻蚀,通过优化后的光刻工艺参数得到了反差明显的光刻图形

    youdao

  • This paper takes advantage of silicon dioxide thin film and yttrium oxide for surface modification to increase the infrared transmittance of sapphire.

    因此本文结合氧化氧化钇优点把两者用作红外增透薄膜蓝宝石进行表面改性提高红外透过率。

    youdao

  • This paper takes advantage of silicon dioxide thin film and yttrium oxide for surface modification to increase the infrared transmittance of sapphire.

    因此本文结合氧化氧化钇优点把两者用作红外增透薄膜蓝宝石进行表面改性提高红外透过率。

    youdao

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