Silicon diode array is more and more widely used in astronomical observation.
硅二极管阵在天文观测中的应用已日趋广泛。
Each diode is cut from a wafer of crystals layered over a base of silicon or sapphire.
每一个二极管都是从硅或者蓝宝石薄片上切割下来的。
Silicon power rectifier diode. Cathode to case. Repetitive peak reverse voltage 800v. Average rectified forward current 25a.
硅功率整流二极管。阴极情况。重复峰值反向电压800v。平均整流电流25a。
Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 400v.
硅功率整流二极管，300安培。阴极情况。最大重复峰值反向电压400v。
To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。
The distinguishing feature of this plan is to adopt silicon backward photoelectric diode as target screen and to scan with fast electron.
特点是采用“反向击穿硅光电二极管”做靶面，并用快电子扫描。
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c -V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
An ordinary silicon rectifier diode consists of ap-n junction of which the player is the anode.
一个普通的硅整流二极管是由p - n结组成，这个结的p层是阳极。
The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide.
半导体结型二极管包括硅，所述硅与硅化物相接触时结晶化。
Each diode is cut from a wafer of crystals layered over a base of silicon or sapphire.
每一个二极管都从硅(或者蓝宝石为衬底的)晶片上切割下来。
For comparison, a standard silicon infrared photo diode has a response ratio of 10.
相比之下，标准硅红外光电二极管的响应比为10。
The results show that thin film with deposition of LaB6 in the diode can markedly improve the emission properties compared with pure silicon tip.
测试结果表明，沉积六硼化镧薄膜后的二极管发射性能与纯硅尖相比具有明显增强。
In this paper, the probability for adjusting silicon fast recovery diode soft factors and softness by selecting proper recombination center in process is analyzed.
探讨了快恢复二极管制造过程中，选择适当的复合中心能级去调整快恢复二极管软度因子和软度的可行性。
This paper introduces a new method to measure the intensity distribution of single seam diffraction by replacing the silicon photocell and light activated diode with light activated triode.
利用光敏三极管代替硅光电池和光敏二极管来测试单缝和双缝衍射的光强分布。
The main product is zener diode series, schottky barrier diode series, Transistor series, MosFET series, controlled silicon series, IC series.
主要产品有稳压二极管系列、肖特基二极管系列、三极管系列、场效应管系列、可控硅系列、IC产品系列。
The main product is zener diode series, schottky barrier diode series, Transistor series, MosFET series, controlled silicon series, IC series.
主要产品有稳压二极管系列、肖特基二极管系列、三极管系列、场效应管系列、可控硅系列、IC产品系列。
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