If the strain exceeds the tolerable limit, the Si-O-Si linkage can break easily at high temperature and lead to the creation of positive and negative charges on silicon and oxygen atoms, respectively.
如果张力超过耐受极限，硅氧烷键就很易在高温下发生断裂并在硅和氧原子上分别形成正负电荷。
If the strain exceeds the tolerable limit, the Si-O-Si linkage can break easily at high temperature and lead to the creation of positive and negative charges on silicon and oxygen atoms, respectively.
如果张力超过耐受极限，硅氧烷键就很易在高温下发生断裂并在硅和氧原子上分别形成正负电荷。
应用推荐