Plasma chemical vapor deposition in silane radio frequency glow discharge is a main fabrication technology of hydrogenated amorphous silicon (a-Si: h) films.
射频辉光放电硅烷等离子体化学汽相沉积是制备氢化非晶硅薄膜的主要工艺技术。
The thickness of the incubation layer increases with increasing silane concentration and decreasing discharge power.
孵化层的厚度随硅烷浓度的增加或辉光功率的降低而增大。
Adecomposition of silane and NF3 by low pressure plasma and waste as treatment by non-thermal discharge plasma are discussed.
用低压等离子体分解硅烷和NF 3以及用放电等离子体处理汽车等的排入废气。
Microcrystalline silicon solar cells with the variation of silane concentration (SC) and discharge power were fabricated by very high frequency plasma-enhanced chemical vapor deposition.
采用甚高频等离子体增强化学气相沉积技术成功地制备了不同硅烷浓度和辉光功率条件下的微晶硅电池。
Microcrystalline silicon solar cells with the variation of silane concentration (SC) and discharge power were fabricated by very high frequency plasma-enhanced chemical vapor deposition.
采用甚高频等离子体增强化学气相沉积技术成功地制备了不同硅烷浓度和辉光功率条件下的微晶硅电池。
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