A very uniform diamond film was grown on the mirror-polished 3 "Si wafer. The grown films were characterized by SEM and Raman spectroscopy."
在3英寸镜面抛光的硅衬底上制备了平整的金刚石薄膜，生长的薄膜用SEM及喇曼光谱进行了测试。
The quality requirements on si wafer for modern ULSI, research progress on CZ si crystal growth technology and wafer processing, the market situation and prospect were outlined.
概述了现代特大规模集成电路对硅单晶片的质量要求、直拉硅单晶生长工艺及晶片加工技术研究进展和硅单晶材料市场现状及发展趋势。
The paper presented a novel way to fabricate silicon microneedles with (110) si-wafer.
描述了一种用（110）晶面硅片制造微米针管的新方法。
In this paper, the area contact model of depletion layer width under avalanche breakdown in Si epitaxial wafer by a three-probe method is analysed. The theory accords with experimental results.
本文分析了三探针测试硅外延片中雪崩击穿时耗尽层宽度的面接触模型，理论和实验结果吻合。
The quality of SOI wafer mainly depends on the structure of Top-Si as well as BOX (Buried Oxide).
SOI材料的质量很大程度上取决于顶层硅及埋层的结构。
The quality of SOI wafer mainly depends on the structure of Top-Si as well as BOX (Buried Oxide).
SOI材料的质量很大程度上取决于顶层硅及埋层的结构。
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