They also have hopes that when the efficiency of the amorphous silicon photovoltaic cells improves in the future, it may become possible to mass-produce the si PV cells by using a roll-to-roll method.
他们希望将来，当非晶态硅光伏电池的光电转化效率提高后，能利用卷到卷式的生产方式进行大规模的硅光伏电池的生产。
Patterned crystallization of amorphous silicon (a-Si) on substrates of glass is very important for the fabrication of thin film transistor used in active matrix liquid crystal displays.
以玻璃为基底的非晶硅图形式结晶，对于研制用于矩阵液晶显示的薄膜半导体具有重要意义。
Plasma chemical vapor deposition in silane radio frequency glow discharge is a main fabrication technology of hydrogenated amorphous silicon (a-Si: h) films.
射频辉光放电硅烷等离子体化学汽相沉积是制备氢化非晶硅薄膜的主要工艺技术。
The value of hypereutectic Al Si alloys is their fine primary silicon particles.
而使高硅铝合金充分发挥实用价值的关键是细化初晶硅。
In this paper, we have studied a preparation and structure of ceramic silicon sheets for substrate of poly-Si thin film solar cells.
文章研究了用来作为多晶硅薄膜太阳电池衬底的陶瓷硅材料的制备方法及其结构。
One of them is to implant terbium ion into silicon oxides thin film which is grown on Si(111) substrates.
第一种是在在矽（111）基板上成长氧化矽，并将镧系元素-铽，以离子布植的方式植入样品。
The results of analysis show that wty the silicon separatas out as a preliminary phase, and why the Al-Si alloys have their own pseudoeutectic structures are all for thermodynamical reasons.
分析结果表明，共晶结晶时硅之所以成为先析出相，铝硅合金之所以存在伪共晶，都有其热力学原因。
This article has summarized the applications of the hydrogenated amorphous silicon (a-Si: h) to photoreceptor of the electrophotography.
本文概述了氢化非晶硅作为静电复印感光膜的应用。
This paper firstly gives a brief review about the history of amorphous semiconductor and the rapid progress in hydrogenated amorphous silicon (a-Si: h) film in recent years.
本文首先简要地回顾了非晶半导体的历史和近年来含氢非晶硅瞋的迅速进展。
Solar grade silicon(SoG-Si) is not only the basic raw materials of PV industry, but also is the mainly raw materials of semiconductor industry.
太阳能级多晶硅不仅是光伏产业的基础原材料，同时也是提纯制备半导体级硅的主要原材料。
On the basis of analysis of activated silicon and aluminum components, a new smelting process of Si Al Fe alloy by use of coal spoil for replace a part of bauxite was proposed.
通过分析煤矸石的活性硅、铝成分，提出了以煤矸石代替部分铝钒土冶炼硅铝铁合金。
The primary silicon particles precipitating from the solidification of Al-Si hypereutectic alloy was regarded as inclusions.
将铝硅过共晶合金凝固过程中析出的初生硅颗粒视为夹杂物颗粒。
The results showed that the implanted silicon ions have no influence on the top Si but created Si nanocrystals (clusters) in the BOX.
研究结果表明，硅离子的注入并未对顶层硅的性能产生明显的影响，对BOX层的影响主要是产生了硅纳米团簇。
If the strain exceeds the tolerable limit, the Si-O-Si linkage can break easily at high temperature and lead to the creation of positive and negative charges on silicon and oxygen atoms, respectively.
如果张力超过耐受极限，硅氧烷键就很易在高温下发生断裂并在硅和氧原子上分别形成正负电荷。
The coarse Al-Si alloy produced by carbon thermal reduction of aluminous ore includes 55% aluminum, 25% silicon and some impurities.
由电热还原法制取的一次铝硅合金含有铝55%，硅25%和一些杂质。
There is currently a major ongoing research effort about Silicon-based quantum dot devices because of their unique properties and compatible with mature Si integrated circuit.
硅基量子点器件由于其独特的性能以及和硅集成电路相容的特点成为研究的重点。
Most of the fabrication methods of silicon single-electron transistors can be perfectly compatible with the si complementary metal-oxide-semiconductor (CMOS) technology.
大多数硅基单电子晶体管的制备方法可以很好地与主流的CMOS工艺兼容。
The porous silicon as a sacrificial layer could be fabricated in locally defined areas on the si substrate, using the selective formation of porous silicon.
利用多孔硅形成的选择性，在指定的硅衬底区域制作多孔硅作牺牲层。
The paper presented a novel way to fabricate silicon microneedles with (110) si-wafer.
描述了一种用（110）晶面硅片制造微米针管的新方法。
Si and impurity elements of Fe and Cu in aluminum-silicon bonding wires were determined by inductively coupled plasma atomic emission spectrometry.
该方法应用于快速测定键合硅铝丝中的各种元素，结果满意。
The method of determination of silicon in Mn - si alloy with potassium fluosilicate titration is introduced. On the best test condition, disturbance element is removed.
介绍了用氟硅酸钾滴定法测定硅锰合金中硅的方法，选择确定了最佳实验条件以及干扰的消除。
The present invention discloses a method for making the hydrogenated si containing hydrogenated amorphous silicon and hydrogenated nanocrystalline silicon has real intrinsic capability.
本发明公开了一个使包括氢化非晶硅和氢化纳米晶硅的氢化硅薄膜具有真正本征性的方法。
The recombination activity of grain boundaries (GBs) in casting multicrystalline silicon (mc-Si) was investigated through an electron beam induced current (EBIC) technique.
本文利用电子束诱生电流（EBIC）对铸造多晶硅中晶界的复合特性进行了研究。
Morphology transformation of eutectic silicon in Al-Si alloy during solid solution was observed by OM and SEM.
通过金相和扫描电镜观察研究了铸造铝硅合金中的共晶硅在固溶热处理过程中的形态变化。
Copper nanocrystallites were deposited on mechanically polished single crystal silicon (sc-Si) wafers by electroless deposition method.
采用无电镀沉积技术在经过机械抛光的单晶硅衬底上沉积了铜纳米晶。
Poly-silicon thin film solar cells with high efficiency, stability and low-cost would replace the a-Si thin film solar cells as a new generation of non-pollution civil solar cells.
高效、稳定、廉价的多晶硅薄膜太阳电池有可能替代非晶硅薄膜太阳电池成为新一代无污染民用太阳能电池。
The characteristics and requests of micromachining for silicon based sensors are introduced. The conventional methods of si substrate microfabrication are briefly described.
叙述了硅基传感器微机械加工的特点和要求，简要说明了硅衬底微细加工的常用方法。
Luminescence based on silicon has always been the key subject of the study of Si-based materials and devices.
硅基发光一直是硅基材料和器件研究的重要课题。
Direct nitrogen-silicon reaction in a tungsten-halogen RTP system has been observed and a comparison of N2-Si reaction using RTP system with the reaction using furnace system has been made.
本文报道了以卤素钨灯为辐射源的快速热工艺(RTP)系统中的氮-硅直接热反应并和在常规电阻丝加热氧化炉中的氮-硅反应作了比较。
Direct nitrogen-silicon reaction in a tungsten-halogen RTP system has been observed and a comparison of N2-Si reaction using RTP system with the reaction using furnace system has been made.
本文报道了以卤素钨灯为辐射源的快速热工艺(RTP)系统中的氮-硅直接热反应并和在常规电阻丝加热氧化炉中的氮-硅反应作了比较。
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