The development on quantitative analysis of si in GaAs by SIMS is reviewed critically. Therelative sensitivity factor (RSF) method is discussed in detail.
评述砷化镓中硅SIMS定量分析的进展，讨论了相对灵敏度因子法。
At the moment, most of RF chips and ultra high-speed circuits are based on technologies such as GaAs, Bipolar Si, BiCMOS and so on.
目前射频芯片和高速光纤通信芯片绝大多数都是采用高速双极性硅工艺和砷化镓工艺。
At the moment, most of RF chips and ultra high-speed circuits are based on technologies such as GaAs, Bipolar Si, BiCMOS and so on.
目前射频芯片和高速光纤通信芯片绝大多数都是采用高速双极性硅工艺和砷化镓工艺。
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