The ground state energies of a shallow donor impurity near a sharp surface of a semi-infinite crystal are studied.
本文用变分法计算了半无限晶体近表面内浅态施主杂质的基态能量。
Thickness effect on the shallow donor in parabolic quantum dots within magnetic fields is investigated by using the second-order perturbation method.
本文采用二级微扰方法研究厚度对抛物量子点内浅施主杂质处于磁场中极化子效应的影响。
It is found that the shallow donor levels produced by high dose neutron irradiation are caused by Si-O-C complex compound associated with oxygen carbon and micro-precipitation of oxygen.
发现由于大剂量中子辐照而产生的浅施主是与氧、碳及氧的微沉淀有关的硅-氧-碳络合物。
The results show that the binding energies of shallow donor impurity states strongly depend not only on the wire radius, but also on the applied electric field and the impurity position in the wire.
结果表明杂质态结合能不只是量子线半径的函数，它还随杂质位置，外电场强度发生变化。
The results show that the binding energies of shallow donor impurity states strongly depend not only on the wire radius, but also on the applied electric field and the impurity position in the wire.
结果表明杂质态结合能不只是量子线半径的函数，它还随杂质位置，外电场强度发生变化。
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