The invention discloses a printed semiconductor transistor and a forming method thereof.
本发明设计印刷式半导体晶体管及其形成方法。
This system can be also used for the automatic control of the electro plating and aluminum anodizing process and the DC characteristic measurement of some semiconductor transistor.
同时此系统也可以用于电镀，铝阳极氧化等电化学过程控制，以及晶体管直流特性测试等方面。
Peak Devices is a privately held, fabless semiconductor company that focuses on RF discrete transistor technology.
PeakDevices公司是一家私人公司，其核心领域是RF分立式晶体管技术。
Source and drain regions in the semiconductor may define a transistor gate length.
在半导体中的源极区和漏极区可以限定晶体管栅极长度。
Semiconductor element, organic transistor, light-emitting device, and electronic device.
半导体元件，有机晶体管，发光器件，和电子器件。
Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).
它的结构与普通金属—绝缘体—半导体场效应晶体管(MISFET)基本相同。
Semiconductor device, semiconductor device manufacturing method, high carrier mobility transistor and light emitting device.
半导体器件，半导体器件制造方法，高载流子迁移率晶体管和发光器件。
Semiconductor diodes bipolar junction transistors field-effect transistors transistor amplifiers frequency response operational amplifiers differential and multistage amplifiers integrated circuits.
半导体、二极体、双极电晶体、场效电晶体、电晶体放大器、频率响应、算放大器、差动及多极放大器、积体电路。
Each transistor may be formed from a gate insulating layer formed on a semiconductor.
每个晶体管可以由形成在半导体上的栅极绝缘层形成。
Transistor: Solid-state semiconductor device for amplifying, controlling, and generating electrical signals. Invented at Bell Labs (1947) by John Bardeen, Walter H. Brattain, and William B.
晶体管：用于放大、控制和生产电信号的半导体器件，是贝尔电话实验室的三位美国物理学家巴丁、布喇顿和肖克莱于1947年所发明；
A hetero-structure field effect transistor (HFET), may include a first layer (3) made from a first semiconductor material and a second layer (4) made from a second semiconductor material.
一种异质结构场效应晶体管(HFET)，可以包括由第一半导体材料制成的第一层(3)和由第二半导体材料制成的第二层(4)。
In one embodiment, a thin film transistor comprises a layer of the organic semiconductor material.
在一个实施方案中，薄膜晶体管包含有机半导体材料层。
According to the present invention, formation of lattice defect in an oxide semiconductor layer and entering of moisture can be prevented, improving reliability of the thin film transistor.
本发明能够抑制氧化物半导体层中晶格缺陷的形成并抑制湿气的进入，从而提高薄膜晶体管的可靠性。
The invention relates to a power supply structure of a memory, which comprises a charge pump, a readout voltage regulator, a decoupling capacitor and an MOS (Metal Oxide Semiconductor) transistor;
本发明的存储器的供电结构包括电荷泵、读出电压调节器、一个去耦电容和MOS晶体管；
The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer.
本发明提供了一种其中铝原子不可能扩散到氧化物半导体层的薄膜晶体管。
Provided are an oxide semiconductor material, a method for manufacturing such oxide semiconductor material, an electronic device and a field effect transistor.
本发明提供氧化物半导体材料和其制造方法、电子装置和场效应晶体管。
The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof.
本发明提供一种薄膜晶体管及其制造方法，其中该晶体管的沟道的基本长度被缩短以微型化半导体装置。
The transistor also comprises a drain region of the first conductivity type and electrically communicating with a second semiconductor region that differs from the first semiconductor region.
该晶体管还包括第一导电类型的漏极区，该漏 极区与不同于第一半导体区的第二半导体区电连通。
A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability is provided in the present invention.
本发明的目的之一在于使用氧化物半导体层提供具备其电特性及可靠性优异的薄膜晶体管的半导体装置。
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate.
本发明公开一种半导体功率组件，其包括若干功率晶体管记忆胞，该记忆胞被开设于一半导体衬底中的沟槽所围绕。
A semiconductor device structure (10) uses two semiconductor layers (16 & 20) to separately optimize N and P channel transistor carrier mobility.
一种半导体器件结构（10），其使用两个半导体层（16&20）以分别优化N和P沟道晶体管载流子迁移率。
A membrane transistor, including a semiconductor layer, an inner-island shaped structure composed of the upper semiconductor layer and the lower semiconductor layer.
本发明主要是提供一种薄膜晶体管，其包括有一半导体层、一下重掺杂半导体层与一上重掺杂半导体层构成的内岛状结构。
In an embodiment, the transistor can include a semiconductor layer having a primary surface and a conductive structure.
在一实施方式中，晶体管可包括具有主表面的半导体层和传导结构。
A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET).
一种半导体器件，可以包括至少一个金属氧化物场效应晶体管(MOSFET)。
Organic semiconductor material is the primary factor which differentiates OFET from traditional field-effect transistor.
有机半导体材料是OFET区别于传统场效应晶体管的根本所在。
A bipolar junction transistor relates to the technical field of a semiconductor power device.
双极结型晶体管，涉及半导体功率器件技术领域。
The invention discloses a vertical transistor with high magnification based on organic semiconductor materials.
本发明公开了一种基于有机半导体材料的高放大倍率的垂直型晶体管。
Thus, the semiconductor device can enhance current supply capacity regardless of transistor type.
由此，无论晶体管为何种类型，半导体器件都可以增强电流供应能力。
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided.
提供了一种包括薄膜晶体管的半导体器件，该薄膜晶体管具有氧化物半导体层和优秀的电特性。
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided.
提供了一种包括薄膜晶体管的半导体器件，该薄膜晶体管具有氧化物半导体层和优秀的电特性。
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