The semiconductor substrate may be an SOI (silicon on insulator) structure.
所述半导体衬底可以是SOI（绝缘体上硅）结构。
In an embodiment, the method includes forming a gate dielectric layer on a semiconductor substrate.
实施例中，本方法包括在半导体衬底上形成栅极电介质层。
The semiconductor structure includes a semiconductor substrate, a trench in the semiconductor substrate.
该半导体结构包括半导体基板和所述半导体基板中的沟槽。
The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced.
切割膜框架带、减薄的半导体衬底和C4研磨带的组件。
A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate.
在半导体衬底的正面形成C4研磨带和激光烧蚀粘合层。
The micro machinery commonly is formed by a semiconductor substrate such as a silicon wafer.
微机械一般使用半导体衬底比如硅晶片形成。
A gate insulation layer may be interposed between the gate electrode and the fin of the semiconductor substrate.
栅极绝缘层置于所述栅极电极和所述半导体衬底的所述鳍之间。
In the first polishing step (S20), the compound semiconductor substrate is polished with a chloric polishing agent.
在第一抛光步骤(S20)中，用含氯抛光剂抛光该化合物半导体衬底。
A semiconductor substrate is provided with a gate structure, and a source and drain on opposing sides of the gate structure.
提供具有栅结构、和具有在所述栅结构相对两侧的源和漏的半导体衬底。
First of all, a mask is applied to the semiconductor substrate in order to define a window that is delimited by a peripheral edge.
在半导体基片上首先涂覆一掩模，以确定一个由边沿限定界限的窗口。
The present invention generally provides apparatus and method for forming a clean and damage free surface on a semiconductor substrate.
本发明一般提供用于在半导体基板上形成干净且无伤害的表面的设备及方法。
The portion of the protective layer formed over the active region is removed to expose the active region of the semiconductor substrate.
去除形成在该有源区域上的保护层的部分，以暴露该半导体衬底的有源区域；
The invention relates to a method of manufacturing a semiconductor substrate structure for use in a semiconductor substrate stack system.
本发明提出了一种制造用于半导体衬底叠层系统的半导体衬底结构的方法。
These measurements include temperature and ir drop at locations on the semiconductor substrate, along with the frequency response of integrated circuit.
这些测量包括半导体衬底上的各位置处的温度和IR降、以及集成电路的频率响应。
A gate electrode may surround at least a portion of the fin of the semiconductor substrate. The gate electrode may be insulated from the semiconductor substrate.
栅极电极完全围绕所述半导体衬底的所述鳍的至少一部分并与所述半导体衬底绝缘。
A semiconductor dynamic quantity sensor includes a semiconductor substrate that includes a movable electrode, a pair of first fixed electrodes, and a pair of second fixed electrodes.
半导体动态量传感器包括一个半导体基底，上面有可移动电极，一对第一固定电极，一对第二固定电极。
The paste composition is a paste composition for forming an electrode (8) on a silicon semiconductor substrate (1) and comprises an aluminum powder, an organic vehicle, and a hydroxide.
膏组合物是用于在硅半导体基板(1)上形成电极(8)用的膏组合物，含有铝粉末、有机质媒介物和氢氧化物。
The semiconductor device includes a semiconductor substrate having an active region and a device isolation region defining the active region, and a resistor string formed over the active region.
该半导体器件包 括具有有源区和限定了有源区的器件隔离区的半导体衬底，以及形成于有源区上方的电阻串。
Both of the right and left charge storage regions having a thin oxide layer on the semiconductor substrate, a nitride layer on the thin oxide layer and an insulating oxide layer on the nitride layer.
左和右电荷存储区都具有半导体衬底上的薄氧化物层、薄氧化物层上的氮化物层和氮化物层上的绝缘氧化物层。
Both of the right and left charge storage regions having a thin oxide layer on the semiconductor substrate, a nitride layer on the thin oxide layer and an insulating oxide layer on the nitride layer.
左和右电荷存储区都具有半导体衬底上的薄氧化物层、薄氧化物层上的氮化物层和氮化物层上的绝缘氧化物层。
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