The present invention relates to an apparatus for manufacturing a high-quality semiconductor single crystal ingot and a method using the same.
本发明涉及一种用于制造高质量半导体单晶锭的装置以及使用该装置的方法。
The paper presented a new method for sample treatment in semiconductor indium antimonide single crystal dislocation display, and proveded of feasibility this method with large number experiments.
本文提出了半导体锑化铟单晶位错显示中对样品处理的一种新方法，并通过大量的实验证实了这种方法的可行性。
The invention discloses the method of reclaiming and utilizing the silicon single crystal waste of semiconductor device and integrated circuit.
本发明公开了一种半导体器件与集成电路硅单晶废弃片的回收利用方法。
The compound semiconductor is a thin film of a single crystal.
化合物半导体为单晶薄膜。
The compound semiconductor is a thin film of a single crystal.
化合物半导体为单晶薄膜。
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