The semiconductor device (10) is made over a semiconductor layer (12).
半导体器件（10）被制造在半导体层（12）上。
The semiconductor layer is patterned into the flexible beam cross above the mass body.
将半导体层构图为位于质量体上方的十字形柔性梁。
A trench is also provided, which extends through the semiconductor layer and into the base region.
还设置延伸通过半导体层并进入基区中的沟槽。
The invention discloses a light-emitting element, including a first conductivity type semiconductor layer;
一种发光元件，包括：第一导电型半导体层；
The dye-sensitized semiconductor layer (3) and the porous insulating layer (4) are impregnated with an electrolyte.
染料增感半导体层（3）和多孔绝缘层（4）由电解质浸透。
Stopper is formed by extending the connector layer, or leaving the semiconductor layer, above the mass body corners.
止挡件通过在质量体角部的上方延伸连接件层而形成，或者通过保留半导体层而形成。
In an embodiment, the transistor can include a semiconductor layer having a primary surface and a conductive structure.
在一实施方式中，晶体管可包括具有主表面的半导体层和传导结构。
An electrical connection is provided to the metal layer and semiconductor layer and a magnetic field applier may be also provided.
给金属层和半导体层提供电连接，还可以提供磁场施加器。
The holes and electrons, combine to form photons, thereby causing the electroluminescent semiconductor layer to emit visible light.
空穴和电子结合而形成光子，从而使得电致发光半导体层发出可见光。
The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer.
本发明提供了一种其中铝原子不可能扩散到氧化物半导体层的薄膜晶体管。
Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906.
因此，对氧化物半导体层（905）引入比氧化物半导体层（906）更高浓度的氢。
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided.
提供了一种包括薄膜晶体管的半导体器件，该薄膜晶体管具有氧化物半导体层和优秀的电特性。
The electronic device is provided with a semiconductor layer composed of an oxide semiconductor material and an electrode arranged on the semiconductor layer.
电子装置具有包含氧化物半导体材料的半导体层，和设置在上述半导体层上的电极。
The semiconductor layer and intermediate insulator of the SOI are etched in crossed region of the flexible beam cross and in a looped region above the support body.
在柔性梁的交叉区域中和在支撑体的上方的环形区域中对SOI的半导体层和中间绝缘层进行蚀刻。
A membrane transistor, including a semiconductor layer, an inner-island shaped structure composed of the upper semiconductor layer and the lower semiconductor layer.
本发明主要是提供一种薄膜晶体管，其包括有一半导体层、一下重掺杂半导体层与一上重掺杂半导体层构成的内岛状结构。
Conductivity of the organic semiconductor layer that has absorbed the ultraviolet light is lower than that of the organic semiconductor layer that has not absorbed the ultraviolet light.
以及已经吸收紫外线的有机半导体层的导电率低于没有吸收紫外线的有机半导体层的导电率。
The first electrode is electrically coupled to the semiconductor layer and the second electrode is electrically coupled to the base region, at a location adjacent a bottom of the trench.
第 一电极电耦接到半导体层，第二电极在邻近沟槽的底部的位置处电耦接到基区。
According to the present invention, formation of lattice defect in an oxide semiconductor layer and entering of moisture can be prevented, improving reliability of the thin film transistor.
本发明能够抑制氧化物半导体层中晶格缺陷的形成并抑制湿气的进入，从而提高薄膜晶体管的可靠性。
A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability is provided in the present invention.
本发明的目的之一在于使用氧化物半导体层提供具备其电特性及可靠性优异的薄膜晶体管的半导体装置。
A thin layer of semiconductor is deposited on a ceramic base.
在陶瓷基片上淀积了薄薄一层半导体。
Beginning in the 1960s, physicists were using tools adapted from the semiconductor industry to create new materials from scratch, building them up layer-by-layer at the atomic scale.
在20世纪60年代初，物理学家们使用半导体工业中使用的工具来从头开始创建新材料，在原子尺度上一层层地建立它们。
This paper reviews two dimensional electron gas formed on the liquid helium surface, the semiconductor surface space charge layer and the compound semiconductor heterojunction interface.
本文简要介绍了液氦表面、半导体表面空间电荷层和化合物半导体异质结界面的二维电子气。
Typical chemical mechanical polishing (CMP) of copper layers on semiconductor devices involves using a hard pad in the first step and a soft pad for the barrier layer removal step.
半导体器件上铜层化学机械抛光(CMP)的第一道工序一般需要使用一块硬抛光垫，在磨去阻挡层的工序中要用到软垫。
In an embodiment, the method includes forming a gate dielectric layer on a semiconductor substrate.
实施例中，本方法包括在半导体衬底上形成栅极电介质层。
The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte.
电流在与电解质接触的半导体材料的一或多个表面上形成多孔层。
The semiconductor material with its porous layer can serve as a substrate for a light emitter.
具有其多孔层的半导体材料可充当用于光发射器的基层。
Because the surface coating layer is semiconductor, the products have good electrical conductivity.
由于表面包覆层为半导体，产物导电性较好。
Electric field applied perpendicularly to the layer of quantum wells can change the optical properties(abstraction, reflection and photoluminescence)of semiconductor quantum well structures.
而在垂直于量子阱平面的方向外加电场可以显著的改变半导体量子阱结构的光学性质（如吸收、反射、光致发光等）。
Both of the right and left charge storage regions having a thin oxide layer on the semiconductor substrate, a nitride layer on the thin oxide layer and an insulating oxide layer on the nitride layer.
左和右电荷存储区都具有半导体衬底上的薄氧化物层、薄氧化物层上的氮化物层和氮化物层上的绝缘氧化物层。
A semiconductor device (10) has contact between the last interconnect layer (16) and the bond pad that includes a barrier metal (26) between the bond pad (28) and the last interconnect layer (16).
一种半导体器件(10)，具有在最后的互连层(16)和接合焊盘之间的接触，该接合焊盘包括接合焊盘(28)和最后的互连层(16)之间的阻挡金属(26)。
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