Plasma in radio frequency (rf) glow discharge is widely used in the preparation of semiconductor film materials and microelectronic industry.
射频辉光放电等离子体在微电子及半导体薄膜材料生长等方面有着广泛的应用。
The invention belongs to the field of oxide semiconductor film materials, and in particular relates to a zinc oxide and titanium dioxide composite film material and a preparation method thereof.
本发明属于氧化物半导体薄膜材料领域，特别涉及氧化锌与二氧化钛复合薄膜材料及其制备方法。
Superlattice and quantum well materials of semiconductor are new-style synthetic materials made in modern film growth techniques.
半导体超晶格和量子阱材料是用现代薄膜生长技术制成的一种新型的人造材料。
Semiconductor bridge (SCB) was utilized to ignite energetic materials with thin film discharge and characterized of low input energy, high safety and logic control possibility.
半导体桥(SCB)通过桥膜放电进行含能材料的点火，具有低点火能量、高安全性以及能与数字逻辑电路组合等优点。
Semiconductor bridge (SCB) was utilized to ignite energetic materials with thin film discharge and characterized of low input energy, high safety and logic control possibility.
半导体桥(SCB)通过桥膜放电进行含能材料的点火，具有低点火能量、高安全性以及能与数字逻辑电路组合等优点。
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