Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).
它的结构与普通金属—绝缘体—半导体场效应晶体管(MISFET)基本相同。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。
Semiconductor diodes bipolar junction transistors field-effect transistors transistor amplifiers frequency response operational amplifiers differential and multistage amplifiers integrated circuits.
半导体、二极体、双极电晶体、场效电晶体、电晶体放大器、频率响应、算放大器、差动及多极放大器、积体电路。
A hetero-structure field effect transistor (HFET), may include a first layer (3) made from a first semiconductor material and a second layer (4) made from a second semiconductor material.
一种异质结构场效应晶体管(HFET)，可以包括由第一半导体材料制成的第一层(3)和由第二半导体材料制成的第二层(4)。
Provided are an oxide semiconductor material, a method for manufacturing such oxide semiconductor material, an electronic device and a field effect transistor.
本发明提供氧化物半导体材料和其制造方法、电子装置和场效应晶体管。
A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET).
一种半导体器件，可以包括至少一个金属氧化物场效应晶体管(MOSFET)。
Organic semiconductor material is the primary factor which differentiates OFET from traditional field-effect transistor.
有机半导体材料是OFET区别于传统场效应晶体管的根本所在。
Organic semiconductor material is the primary factor which differentiates OFET from traditional field-effect transistor.
有机半导体材料是OFET区别于传统场效应晶体管的根本所在。
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