This paper presents the building procedures of hydrodynamic model for submicron semiconductor device simulation.
主要讨论了亚微米半导体器件模拟的流体动力学模型方程的建立过程。
Semiconductor device simulation has manifested its ever-increasing importance for the design of miniature devices in VLSI end new discrete devices.
半导体器件模拟，对于设计VLSI中的微小尺寸器件或者是新型的半导体分立器件，都已越来越显得重要。
Based on the analysis of the semiconductor device simulation procedure, this paper proposed a popular design method of the device simulation software.
本文在对半导体器件模拟过程分析的基础上，提出了目前广为流行的器件模拟软件面向对象的设计和开发方法。
In this paper, we apply ADI and high-order compact finite difference method for large-scale asymmetric sparse matrix in semiconductor device simulation.
采用AD I与高阶紧致差分相结合的方法计算大型非对称稀疏矩阵，并实现了该算法在半导体器件模拟中的应用。
In this paper, we apply ADI and high-order compact finite difference method for large-scale asymmetric sparse matrix in semiconductor device simulation.
采用AD I与高阶紧致差分相结合的方法计算大型非对称稀疏矩阵，并实现了该算法在半导体器件模拟中的应用。
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