A new kind of semiconductor absorption fiber-optic temperature sensor is described in the paper.
利用半导体光吸收原理，提出了一种新颖的半导体吸收型光纤温度传感器。
A new kind of generator rotor temperature measuring system is designed based on optical absorption behavior of GaAs semiconductor.
根据砷化镓半导体的光吸收特性，设计了一种新型的发电转子温度测量系统。
We utilize the minority carrier equilibrium continuity equations and semiconductor material absorption of photo to get the expression of current induced by photo.
利用少数载流子的稳态连续性方程和半导体材料对光的吸收，求出光电流的表达式。
The principle, application and exploratory development of semiconductor saturable absorption mirrors for passive Q-switching of solid-state lasers and fiber lasers are emphasized.
着重介绍了固体激光器和光纤激光器调q用半导体可饱和吸收镜的原理、研制方法及应用状况。
A new type technique of semiconductor cleaning is studied via infrared absorption spectra, X ray photoelectron spectra and surface tension detector.
报道了利用红外吸收谱、X射线光电子谱和表面张力测试仪对新型半导体清洗工艺进行研究的结果。
The principle and realization of a Fiber-optic temperature sensors ba sed on semiconductor optical absorption were discussed in detail.
本文较详细地介绍了基于半导体吸收式光强度调制原理的光纤温度传感器的原理及其实现。
The basic structure and the fundamental principle of semiconductor saturable absorption mirrors (SESAM) that are used for passive mode-locking solid-state lasers are introduced.
介绍了半导体可饱和吸收镜(SESAM)的基本结构及使用半导体可饱和吸收镜被动锁模固态激光器的基本原理。
This paper reviews the research progress in both theoretical and experimental aspects of band-to-band optical absorption transition effect in narrow gap semiconductor HgCdTe.
本文主要论述窄禁带半导体碲镉汞的带间光吸收跃迁的理论和实验。
A novel high reflectivity type of semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition is presented.
利用金属有机气相淀积方法生长了一种新型吸收体：高反射率半导体可饱和吸收镜。
Semiconductor materials, such as titania, zinc oxide, cadmium sulfide and cadmium telluride have excellent UV absorption property to generate photoelectrons, which form photocurre…
二氧化钛、氧化锌、硫化镉、碲化镉等半导体材料对紫外光具有很好地吸收性能。
The band theory of solids is used to calculate the absorption and gain of semiconductor media.
固体的能代理论用来计算半导体介质的吸收与增益。
The results show that the absorption fraction of the semiconductor slab of the switch increases the delay time of switches and should be considered in the calculation.
结果表明开关的半导体片对照射激光的吸收因子增大了开关的延迟时间，在计算中应该加以考虑。
A new kind of generator rotator temperature measuring system is designed based on optic absorption theory of GaAs semiconductor.
根据砷化镓半导体的光吸收特性，设计了一种新型的发电转子温度测量系统。
The absorption mechanism of semiconductor is studied.
研究了半导体材料对激光的吸收机制。
The absorption mechanism of semiconductor is studied.
研究了半导体材料对激光的吸收机制。
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