Considering the tunneling effect and the Schottky effect, the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.
运用自洽的蒙特卡罗方法模拟了肖特基接触的隧穿效应。
Considering the tunneling effect and the Schottky effect, the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.
运用自洽的蒙特卡罗方法模拟了肖特基接触的隧穿效应。
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