Firstly, the transport mechanism of SBSD-MOSFET is analyzed.
首先，文中分析了SBSD - MOSFET的电流输运机制。
On the basis of exploration and demonstration, SBSD bulk setter and mass flowmeter was combined to replace the oval gear setters.
在考察、论证的基础上，用SBSD批量给定器和质量流量计配套使用来代替椭圆齿轮设定器。
Three forms of SBSD were found: spikes or sharp waves, spike and wave discharges (the most commonly seen, taking up 63%) and fast activities.
SBSD可表现为棘或尖波、棘慢复合波与快节律三种类型，以棘慢复合波最为常见、占63%。
Finally, our simulation result shows that conventional SOI SBSD-MOSFET can effectively suppress thermionic emission leakage current, but it still can not suppress tunneling leakage current.
最后，我们的模拟发现，普通soi结构SBSD - MOSFET能有效阻挡来自源结的热电子发射泄漏电流，但仍不能阻挡来自漏结的隧穿泄漏电流。
Finally, our simulation result shows that conventional SOI SBSD-MOSFET can effectively suppress thermionic emission leakage current, but it still can not suppress tunneling leakage current.
最后，我们的模拟发现，普通soi结构SBSD - MOSFET能有效阻挡来自源结的热电子发射泄漏电流，但仍不能阻挡来自漏结的隧穿泄漏电流。
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