Thedrain saturation current is increased 10% after bonding. To disperse heat of GaNHEMT, this flip chip bonding method seems to be simple and effective.
实验结果表明，这种改进的倒装焊技术可以使HEMT 器件的饱和漏极电流提高10%。
The calculated results also indicate that higher saturation current, transconductance, and cutoff frequency can be achieved by lowering the parasitic resistances.
降低寄生源漏电阻可以获得更高的饱和电流、跨导和截至频率。
The sensitive temperature characteristics of PN junction inverse saturation current is fully utilized to obtain good temperature coefficient and PSRR with simple circuit structure.
该技术充分利用了PN结反向饱和电流是温度敏感函数的特性，使用简单的电路结构，达到了很好的温度特性和电源抑制性能。
The sensitive temperature characteristics of PN junction inverse saturation current is fully utilized to obtain good temperature coefficient and PSRR with simple circuit structure.
该技术充分利用了PN结反向饱和电流是温度敏感函数的特性，使用简单的电路结构，达到了很好的温度特性和电源抑制性能。
应用推荐