Thedrain saturation current is increased 10% after bonding. To disperse heat of GaNHEMT, this flip chip bonding method seems to be simple and effective.
实验结果表明,这种改进的倒装焊技术可以使HEMT 器件的饱和漏极电流提高10%。
Thedrain saturation current is increased 10% after bonding. To disperse heat of GaNHEMT, this flip chip bonding method seems to be simple and effective.
实验结果表明,这种改进的倒装焊技术可以使HEMT 器件的饱和漏极电流提高10%。
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