Sacrificial gate spacers are disposed on the sidewalls of the gate dielectric and gate electrode. Cavities are etched into the substrate extending under the sacrificial gate spacers.

牺牲栅电极间隔物设置在所述栅极电介质和所述栅电极的侧壁上，在所述衬底上蚀刻空腔，并且空腔在牺牲栅电极间隔物下方延伸。

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Sacrificial gate spacers are disposed on the sidewalls of the gate dielectric and gate electrode. Cavities are etched into the substrate extending under the sacrificial gate spacers.

牺牲栅电极间隔物设置在所述栅极电介质和所述栅电极的侧壁上，在所述衬底上蚀刻空腔，并且空腔在牺牲栅电极间隔物下方延伸。

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