Reflection High Energy Electron Diffraction (RHEED);
反射式高能电子衍射；
The samples were analyzed by XRD, AFM, RHEED and Electronic Probes.
通过XRD、AFM、RHEED、电子探针等分析手段对样品进行了分析。
The growth process of the films was in situ monitored by reflective high energy electron diffraction(RHEED).
通过反射高能电子衍射 （RHEED）仪原位实时监测薄膜生长 ，研究薄膜的生长过程。
The growth process of the films was in situ monitored by reflective high energy electron diffraction (RHEED).
通过反射高能电子衍射(RHEED)仪原位实时监测薄膜生长，研究薄膜的生长过程。
Surface damage caused by cutting on Si, InSb, HgCdTe has been studied by Reflection High Energy Electron Diffraction (RHEED) after step-etching the samples.
利用高能反射电子衍射技术（RHEED），研究了硅、锑化铟、碲镉汞样品逐次化学腐蚀后的切割表面损伤。
The cleaning of hydrogen and nitrogen ECR plasma on sapphire substrates are carried out in the calibrated temperature system and evaluated by analyzing RHEED image in ECR-PEMOCVD system.
最后讨论了在经过校温的系统上进行蓝宝石衬底的氢氮等离子体清洗实验，并通过RHEED图像评价清洗结果质量。
The cleaning of hydrogen and nitrogen ECR plasma on sapphire substrates are carried out in the calibrated temperature system and evaluated by analyzing RHEED image in ECR-PEMOCVD system.
最后讨论了在经过校温的系统上进行蓝宝石衬底的氢氮等离子体清洗实验，并通过RHEED图像评价清洗结果质量。
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