Infineon reckons that this roadmap allows it to build on its expertise and production technologies for RF transistor technology.
英飞凌估计，这个路线图使其能够利用其专业知识和生产技术的RF晶体管技术。
This review presents many RF transistor technologies for RFIC applications in cellular and personal communications service (PCS) markets.
介绍分析了在蜂窝和个人通信业务(PCS)市场中适用于RFIC的多种射频晶体管技术。
Peak Devices is a privately held, fabless semiconductor company that focuses on RF discrete transistor technology.
PeakDevices公司是一家私人公司，其核心领域是RF分立式晶体管技术。
Metal wire bonding interconnection is the key means in the internal matching technology of RF power transistor.
金属键合线互连是射频大功率晶体管内匹配技术中的关键手段。
RF PA almost working in large signal, so it's circuit design methods and transistor used are different from microwave small signal amplifier, these will led to RF PA design become more difficulty.
射频功率放大器总是工作在大信号状态下，它所用的放大器件和电路设计方法都不同于小信号放大器，导致了功率放大器的设计难度较大。
The first step in the RF amplifier design is to check if the transistor is unconditionally stable.
微波放大器设计中，首要考虑的问题是管子的稳定性。
The diameter, length, arch height and space of bond-wires have great impacts on the radio frequency performance of RF power transistor.
键合线的直径、长度、拱高和并列键合线间距等物理参量，均对器件性能有很大影响。
The diameter, length, arch height and space of bond-wires have great impacts on the radio frequency performance of RF power transistor.
键合线的直径、长度、拱高和并列键合线间距等物理参量，均对器件性能有很大影响。
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