All samples were prepared by rf magnetron sputtering method.
所有样品采用射频辅助磁控溅射方法制备。
Quadrupole mass spectrometer was used to analyze the plasma environment of RF magnetron sputtering PTFE target with pulsed bias.
采用四极质谱仪测量了试验参数对高压脉冲增强射频磁控溅射ptfe靶等离子体气氛的影响规律。
Thin films of lead lanthanum zirconate titanate (PLZT) were deposited by rf magnetron sputtering from oxide targets onto unheated Si substrates.
用磁控射频溅射方法在不加热的硅衬底上沉积生长锆钛酸铅镧（PLZT）薄膜。
The effects of low-power(LP) buffers on the structural properties of ZnO thin films deposited under high power by RF magnetron sputtering have been investigated.
本文采用反应磁控溅射法和溶胶凝胶法制备了均匀致密的三氧化钨薄膜材料，对它的光学性质、表面形态、结构等进行了深入的研究。
The plasma can be 4 generated by hot-cathode discharge or RF discharge of gas. In addition, the device has four metal plasma sources, two magnetron sputtering targets, cold and hot target supports.
真空室内的气体等离子体可由热灯丝或射频放电产生，4另外还配置了4个金属等离子体源、两套磁控溅射靶和冷却靶台。
High resistance AZO films are fabricated on quartz substrates by radiofrequency (RF) magnetron sputtering deposition method in the environment with high oxygen proportion.
在石英衬底上采用射频磁控溅射的方法制备高电阻azo薄膜，其中高电阻由高氧氩比环境得到。
High resistance AZO films are fabricated on quartz substrates by radiofrequency (RF) magnetron sputtering deposition method in the environment with high oxygen proportion.
在石英衬底上采用射频磁控溅射的方法制备高电阻azo薄膜，其中高电阻由高氧氩比环境得到。
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