The results show that the etching rate depends strongly on plasma composition and the RF bias voltage, but rather weakly on the gas flow rate.
结果表明刻蚀气体的组分和射频偏压对刻蚀速率有较大影响，而气体流量影响不大。
The module design contains transmission line, bias and APC circuit of LD, low noise and high linearity RF circuit, FSK modern, monitor and control circuit design and PCB layout.
本文重点进行了光模块主要的电路包括传输线、LD偏置电路与APC电路、低噪声高线性射频电路、FSK调制与解调功能电路与监视控制功能电路的设计。
Selfnegative bias on insulate substrate surface of rf glow discharge plasma reactors is studied theoretically. The mathematical analysis has been obtained by equivalent circuit method.
讨论了高频辉光放电等离子体系统中绝缘衬底表面的自负偏压问题，用等效电路方法给出了自负偏压的数学解析。
Influence of discharge parameters such as RF power and working pressure on the negative self-bias voltage of substrate was investigated by an oscilloscope with a high voltage probe.
采用高压探头示波器系统研究了射频辉光放电参数对自偏压的影响规律。
The RF current that flows up the support structure puts an unwanted bias on the support structure and also contributes to reduction of the RF current flowing to the showerhead.
往上流经支撑结构的射频电流会将不期望的偏压施加在支撑结构上，也会因此降低流至喷洒头的射频电流。
Quadrupole mass spectrometer was used to analyze the plasma environment of RF magnetron sputtering PTFE target with pulsed bias.
采用四极质谱仪测量了试验参数对高压脉冲增强射频磁控溅射ptfe靶等离子体气氛的影响规律。
Therefore, plasma etching anisotropy can be improved by increasing rf frequency or rf-bias power.
因此，等离子体刻蚀的各向异性可以通过增加射频频率和射频功率来改善。
The RF self-bias of the substrate in an RF inductively coupled plasma is controlled by changing the impedance of an external circuit inserted between the substrate and the ground.
采用调节射频电感性耦合等离子体中基片电极与地之间的外部电路阻抗的方法，控制基片电极的射频自偏压。
The RF self-bias of the substrate in an RF inductively coupled plasma is controlled by changing the impedance of an external circuit inserted between the substrate and the ground.
采用调节射频电感性耦合等离子体中基片电极与地之间的外部电路阻抗的方法，控制基片电极的射频自偏压。
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