The equivalent circuit of the three-gap coupled cavity type output section is given, with which resonant frequency of resonant modes and gap impedance matrix are calculated.
给出了三间隙耦合腔输出回路的等效电路，利用等效电路确定了谐振频率及间隙阻抗矩阵。
The resonant tunneling diode (RTD) is one of the most promising band-gap engineered heterostructure devices due to its negative differential resistance.
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
Spontaneous emission can be totally suppressed or strongly enhanced depending on the relative position of the resonant frequency from the edge of the photonic band gap and the photonic mode density.
通过原子上能级与光子频率带隙边缘的相对位置或者光子态密度，可以抑制或增强原子的自发辐射。
In this paper, from the lumped circuit elements point of view, the distribution of gap interaction impedance coefficients of resonant coupled cavity output section of broadband klystrons is analyzed.
本文用集总等效网络的观点对速调管双间隙输出段间隙阻抗系数的分布和变化规律进行了分析。
The duration of bound-entangled state (non-distillable) is controlled by the resonant control laser and the detuning of the atomic frequency inside the gap with respect to the band-edge.
束缚纠缠态（不能提纯的纠缠态）在系统中的持续时间由驱动场的拉比频率以及原子能级和光子晶体禁带带边的相对位置决定。
The duration of bound-entangled state (non-distillable) is controlled by the resonant control laser and the detuning of the atomic frequency inside the gap with respect to the band-edge.
束缚纠缠态（不能提纯的纠缠态）在系统中的持续时间由驱动场的拉比频率以及原子能级和光子晶体禁带带边的相对位置决定。
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