Resistive random access memory (RRAM) is one of the most promising candidates for next generation of non-volatile memory.
在各种新型非挥发性存储器中，阻变存储器(RRAM)具有成为下一代存储器的潜力。
Resistive random access memory (RRAM) is anticipated to be the promising next generation non-volatile memory operating with fast switching speed, low power consumption and nondestructive readout.
电阻型随机存储器（RRAM）以其运行速度快、功耗低和非破坏性读出等特性，被预期为理想的新一代非易失存储器。
The invention provides an organic resistive random access memory and a preparation method thereof, which belong to the technical field of very large scale integrated circuit.
本发明提供了一种有机阻变存储器及制备方法，属于超大规模集成电路技术领域。
The invention provides a polymorphic organic resistive random access memory and a preparation method, and belongs to the technical field of a super-large-scale integrated circuit.
本发明提供了一种有机阻变存储器及制备方法，属于超大规模集成电路技术领域。
The invention provides a polymorphic organic resistive random access memory and a preparation method, and belongs to the technical field of a super-large-scale integrated circuit.
本发明提供了一种有机阻变存储器及制备方法，属于超大规模集成电路技术领域。
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