Glass coating, high precision, small resistance drift.
玻璃釉包覆，精度高，阻值漂移小。
That is to say, the improvement of the capability of the fan can help to overcome the problem of the total ventilation resistance drift.
提高通风机能力，有利于克服通风机通风系统总风阻飘移的问题；
This circuit can greatly enhance stability and accuracy of gas sensors which have start resistance drift but basically constant sensitivity.
该电路适用于起始阻值漂移，而灵敏度基本不变的气敏元件，可大大提高此类元件的稳定性与准确性。
The modelling inaccuracy and parameter drift in motor control, such as the stator and rotor resistance shift with temperature, act as the disturbance in the control system.
电机控制模型中的建模误差，以及系统运行中的参数漂移，诸如电机的定、转子电阻随着温度发生变化，相当于对所研究的控制系统加入了扰动。
Stability: 6 DOF motion measurement and control, the use of high-performance MEMS sensor technology, impact resistance, low drift.
稳定：6自由度运动测控，采用高性能MEMS工艺传感器，抗冲击、低漂移。
The improvement of the measuring system performance such as stability, drift, noise-suppression and interference-resistance by adopting these measures has been discussed.
讨论了这些措施对测量系统的稳定性、漂移、噪声抑制、抗干扰等性能指标的改善。
The drift drain resistance model is derived from the free carrier concentration analyzing in the drift region.
以单位面积下漂移区自由载流子浓度为基础，得出漂移区电阻的解析模型。
The designed converter could operate well with a slender supply voltage signal because of its high input resistance and low offset drift.
该转换器的高输入阻抗和低失调电压漂移输入增益级可以保证芯片在微弱电压信号下正常工作。
The new structure features high breakdown voltage, low on-resistance , and charge balance in the drift region.
结果表明这种结构具有高的击穿电压、低的导通电阻和漂移区中电荷平衡的特点。
JFET resistance, accumulation resistance, channel resistance and drift region resistance is the most important components of on-resistance.
JFET区电阻、沟道电阻、积累层电阻和漂移区电阻是导通电阻的四个最主要的组成部分。
In order to obtain good compromise of the breakdown voltage and the specific on-resistance of SOI-LDMOS, a SOI-LDMOS with trench oxide in drift region is proposed.
为了获得SOI -LDMOS器件耐压和比导通电阻的良好折衷，提出了一种漂移区槽氧soi - LDMOS高压器件新结构。
In order to obtain good compromise of the breakdown voltage and the specific on-resistance of SOI-LDMOS, a SOI-LDMOS with trench oxide in drift region is proposed.
为了获得SOI -LDMOS器件耐压和比导通电阻的良好折衷，提出了一种漂移区槽氧soi - LDMOS高压器件新结构。
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