The relationship of technological parameters and microstructure to the resistivity of reaction-bonded silicon carbide(RBSiC) in the presence of liquid silicon was studied in this paper.
研究了液态硅参与下的反应烧结碳化硅的工艺参数、显微组织对其电阻率的影响。
The relationship of technological parameters and microstructure to the resistivity of reaction-bonded silicon carbide(RBSiC) in the presence of liquid silicon was studied in this paper.
研究了液态硅参与下的反应烧结碳化硅的工艺参数、显微组织对其电阻率的影响。
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