The experimental results can be qualitatively explained within the frame work Si quantum wire model.
实验结果可以用硅量子线的模型解释。
This paper reviews electron transport effects and study progress on low dimensional semiconductor structures such as superlattice, quantum wire and quantum dot.
文中介绍了超晶格、量子线与量子点等低维半导体结构中的电子输运效应及其研究进展。
By using Non-equilibrium Green Function(NGF) method, photon-assisted tunneling(PAT) through a quantum wire with a microwave modulated side-coupled quantum dot is studied.
应用非平衡格林函数方法，研究了带有微波调制的侧向耦合量子点的量子线中的光辅助隧穿。
Within the effective mass approximation and the perturbation method, the electron and hole ground-state energy in a magnetic field in the rectangular quantum wire are calculated.
在有效质量近似下，利用微扰理论研究了矩形量子线中电子和空穴的基态能量。
The ground state energy, the vibrational frequency and the mean number of optical phonons are expressed as a function of the confinement strength of quantum wire and the Coulomb bound potential.
计算了抛物量子线中强耦合束缚极化子的基态能量、振动频率和声子平均数。讨论了这些量对库仑束缚势和约束强度的依赖关系。
Carbon nanotubes have novel mechanical, electrical properties, and they are typical 1D quantum wire. They are expected to be the fundamental materials for future micro- or nano- electronic devices.
碳纳米管具有独特的力学、电学性能，并且是典型的一维量子线，被认为是构筑未来微纳电子器件的主要材料。
The influences of Coulomb field on the properties of strong-coupling polaron in a parabolic quantum wire are studied by using the linear combination operator and the unitary transformation methods.
采用改进的线性组合算符法研究了库仑场对抛物量子线中强耦合极化子性质的影响。
Key challenges on CMOS scaling down into nanometer regime are discussed, such as power supply and threshold voltage, short-channel effect, quantum effect, random doping distribution and wire delay.
本论文着重论述未来CMOS进入纳米尺寸的关键挑战，如：电源电压和阈值电压减小、短沟效应、量子效应、杂质数起伏以及互连线延迟等影响。
Key challenges on CMOS scaling down into nanometer regime are discussed, such as power supply and threshold voltage, short-channel effect, quantum effect, random doping distribution and wire delay.
本论文着重论述未来CMOS进入纳米尺寸的关键挑战，如：电源电压和阈值电压减小、短沟效应、量子效应、杂质数起伏以及互连线延迟等影响。
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