The effects of quantum well width, doping concentration, barrier width and height on RTD I-V characteristics are analyzed in details.
对量子阱宽度、掺杂浓度、势垒宽度和高度对RTD的I-V特性的影响进行了详细的分析。
The numerical simulation results show the quantum limit of the quantum well width, beyond which will observe the resonant tunneling phenomena.
数值模拟结果给出这类电子器件的量子极限——可观察到共振隧穿现象的量子阱宽度的限度。
The numerical simulation results show the quantum limit of the quantum well width, beyond which will observe the resonant tunneling phenomena.
数值模拟结果给出这类电子器件的量子极限——可观察到共振隧穿现象的量子阱宽度的限度。
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