For multilayer welding on steels, pulsed arc welding is recommended.
在多层钢加层焊时建议使用脉冲电弧焊。
A new type of argon tungsten pulsed arc welding machine has been introduced in this paper.
本文介绍一种新型钨极脉冲氩弧焊机，分析了基本工作原理及技术性能。
For multilayer welding on steel, pulsed arc welding is recommended-also appropriate for oven soldering.
建议在钢材多层焊时使用脉冲电弧焊，也适合于炉焊。
Pulsed arc welding power source by thyristor DC chopper consists of common DC arc welding power source and DC chopper.
采用晶闸管直流斩波器的脉冲弧焊电源是由普通的直流弧焊电源，附加晶闸管直流斩波器组成的。
A new type of argon tungsten pulsed arc welding machine has been introduced in this paper. The basic operating principle and technical characteristics has been analyzed.
本文介绍一种新型钨极脉冲氩弧焊机，分析了基本工作原理及技术性能。
Ion energy is an important parameter influencing the quality of films by pulsed vacuum arc ion deposition, so it is very necessary to measure the ion energy of pulsed arc.
离子能量是影响脉冲真空电弧离子镀镀膜质量的一个重要参数，因而测量真空电弧中离子的能量非常重要。
Particularly suitable for repair welding of bronze statues. For multilayer welding on steels, pulsed arc welding is recommended. For large work pieces preheating is recommended.
特别适合铜雕像修复的焊接，建议在钢材多层焊时使用脉冲电弧焊，用于大焊件时建议预热。
This study designed a system to generate ultrasonic-frequency pulsed plasma cutting arc, and experimentally investigated the vibration characteristics of the high frequency pulsed arc.
本研究设计了一种超声频脉冲等离子切割电弧发生系统，并通过实际切割试验，测试、分析了这种高频脉冲电弧的振动特性。
The plasma cloud charge sensor was applied to detect the status of keyhole molten pool during pulsed plasma arc welding, furthermore, the detected signals were studied.
将等离子云传感器应用于脉冲等离子弧焊穿孔熔池小孔状态检测，并对检测信号的波形特征做了深入研究。
The plasma source ion implantation device consists of pulsed negative high voltage power, hot cathode arc discharge system, vacuum chamber and target stage, vacuum system and monitor system.
等离子体源离子注入装置由脉冲负高压源系统、热阴极弧放电系统、真空室及样品台、真空系统和监测系统等五部分组成。
The influencing factors and their weights on deposited temperature have been studied in detail during pulsed bias arc ion plating (PBAIP).
针对脉冲偏压电弧离子镀技术，分析了影响基体沉积温度的各项因素及其影响程度。
Methods: Electrochemical technique was adopted to detect the changes of anode polarization curves of TA2 and TC4 after welding with laser or pulsed tungsten argon arc.
方法：采用动电位极化技术，分别测定激光焊接及脉冲氩弧焊接TA2和TC4后，材料阳极极化曲线的变化。
And it enumerates the troubleshootings in WSE-500 multi-function pulsed tungsten argon arc welding.
例举了WSE- 500多功能脉冲钨极氩弧焊机故障排除的事例。
Its very important to control the thickness of the film in the process of the pulsed vacuum arc deposition (PVAD).
在脉冲真空电弧离子镀膜过程中，膜层厚度的控制至关重要。
According to the arc light features of pulsed TIG welding and its effects on vision measurements, a special method of image capturing and controlling is put forward.
根据脉冲tig焊接电弧的弧光特性及其对视觉检测的影响，提出了一种独特的图象采集和控制方法。
ZHOU S, YAN Y X. Structure and mechanical properties of DLC films by pulsed vacuum arc ion deposition[J]. Vacuum, 2005,42(2):15-18.
[12] 周顺，严一心。脉冲真空电弧离子镀在不锈钢上沉积类金刚石薄膜的研究[J]。真空，2005，42（2）：15-18。
A: Start by using a weld process that provides more control over heat input: short circuit transfer GMAW (" short arc "), pulsed GMAW, GTAW and pulsed GTAW.
答：首先用焊接过程提供更多控制热输入：短路转让的GMAW(“短弧”)脉冲gmaw焊接、氩弧焊和脉冲gtaw。
Based on the introduction of pulsed film deposition and vacuum arc technique, the principles, characters, research developments and applications of laser-arc technique are presented.
本文首先介绍了脉冲激光蒸发沉积以及真空弧沉积技术，在此基础上对激光真空弧技术的原理、特点、研究现状及应用进行了文献综述。
A medium frequency pulsed starting arc unit, which consistS of a voltage dowble is introduced in this paper, and its working principle and parameter design are also analyzed.
介绍了一种用逆变方式和倍压整流方式构成的中频逆变式引弧器，并对其工作原理及参数设计进行了分析。
A microcomputer controlled IGBT inverter power source for pulsed MIG welding is developed. It realizes the self adaptive control and closed loop control of arc voltage in pulsed MIG welding process.
建立了微机控制和IGBT逆变式脉冲MIG焊电源系统，实现了MIG焊接过程弧压自适应闭环控制。
Mechanical and optical properties of titanium dioxide films prepared by pulsed bias arc ion plating;
在脉冲真空电弧离子镀膜过程中，膜层厚度的控制至关重要。
Mechanical and optical properties of titanium dioxide films prepared by pulsed bias arc ion plating;
在脉冲真空电弧离子镀膜过程中，膜层厚度的控制至关重要。
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