The results show that formation of the precursor radicals and the growth mechanism in ICP-CVD with high electron density are different from those in conventional CVD with low electron density.
实验结果预示着在高电子密度的ICPCVD过程中，活性原子集团的形成以及薄膜的生长机理与传统的等离子体CVD过程不同。
The results show that formation of the precursor radicals and the growth mechanism in ICP-CVD with high electron density are different from those in conventional CVD with low electron density.
实验结果预示着在高电子密度的ICPCVD过程中，活性原子集团的形成以及薄膜的生长机理与传统的等离子体CVD过程不同。
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