We mainly focus on the threshold voltage shift under subsequent positive bias temperature (PBT) stress after the preceding NBT.
主要集中在对器件施加nbt和随后的PBT应力后器件阈值电压的漂移上。
We mainly focus on the threshold voltage shift under subsequent positive bias temperature (PBT) stress after the preceding NBT.
主要集中在对器件施加nbt和随后的PBT应力后器件阈值电压的漂移上。
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