This way plays a role in the simulation model of technologic process of other power semiconductor devices' dopants.
此种方法为电力器件其他杂质的扩散工艺过程的模拟提供了一定指导作用。
VDMOS is a new generation of power semiconductor devices, the microelectronics and power electronics technology integration together.
VDMOS是微电子技术和电力电子技术融和起来的新一代功率半导体器件。
Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.
绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件，驱动器的合理设计对于IGBT的有效使用极为重要。
The company is located between the Yangtze River and the Beijing-Hangzhou Grand Canal where it is a beautiful and ideal place for manufacture of power semiconductor devices.
公司位于长江和京杭大运河交界处，风景优美，是生产功率半导体器件的理想之地。
Semiconductor devices have no filament or heaters and therefore require no heating power or warm-up time.
半导体器件没有灯丝，因此也不需加热功率或加热时间。
Compared with semiconductor devices, vacuum microelectronic devices can work with higher frequency and larger power at a wider range of temperature.
真空微电子器件相对于半导体器件来说，有着更高的工作频率和输出功率，正常工作温度范围也相对较大。
The second is electronic devices of high-performance power semiconductor such as MOSFET and IGBT.
二是正在快速更新的高性能功率半导体MOSFET和IGBT等电力电子器件；
The annual growth rate of the world-wide semiconductor sales is about 15%, and that of the traditional devices such as SCR and GTR is much less than the new power devices.
功率 半导体 器件的全球销售额每年以约15％的速率增长，而传统器件如SCR和GTR等的年增长率远小于新型 器件。
This paper studies and analyses mathematically the typical main circuits of the new generation of arc welding inverters using IGBT, MOSFET as power semiconductor switching devices.
对新一代弧焊逆变器各种典型的主电路进行了较深入的数学分析和研究。
This paper studies and analyses mathematically the typical main circuits of the new generation of arc welding inverters using IGBT, MOSFET as power semiconductor switching devices.
对新一代弧焊逆变器各种典型的主电路进行了较深入的数学分析和研究。
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