A new structure of power MOS-gated thyristor named Trench MOS Controlled thyristor (TMCT) is presented.
报道了一种新结构的功率栅控晶闸管，称其为槽栅MOS控制的晶闸管(TMCT)。
All control circuits are integrated (including power MOS) in the IC except the output low-pass filter, two optional operation modes: PWM and PFM are available.
该IC集成了除输出低通滤波器的所有控制电路(包括功率MOS)，提供PWM和PF M两种模式供选择。
With the addition of an internal P-channel Power MOS, a coil, capacitors, and a diode connected externally, these ICs can function as step-down switching regulators.
内部P沟道功率MOS，线圈，电容和外接二极管此外，这些IC可以作为降压开关稳压器 。
The design for high-power MOS tube as the core original pipe, using discrete components and integrated operational amplifier combines the low-frequency power amplifier design.
本计划以大功率管MOS管为核心原件，采用分立元件与集成运放相连合计划出的低频功率放大器。
The power efficiency of MOS charge pumping circuit is becoming one of the most important issues as the power supply decreasing continuously and the area of a chip.
随着电源电压的不断降低和芯片面积的不断减小，电荷泵的效率已成为MOS电荷泵电路设计过程中最为人们关心的问题之一。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
A bootstrap MOS circuit is introduced for bias, which shows a good performance in power supply reject ratio.
偏置电路采用自举基准源，具有良好的电源抑制比。
The power switches utilize vertical MOS technologies to ensure optimum on state resistance.
电源开关应用垂直场效应管技术来确保最佳的阻态。
The invention relates to a power supply structure of a memory, which comprises a charge pump, a readout voltage regulator, a decoupling capacitor and an MOS (Metal Oxide Semiconductor) transistor;
本发明的存储器的供电结构包括电荷泵、读出电压调节器、一个去耦电容和MOS晶体管；
Based on C-Mos design, high resistance to noise, signals and low power consumption can be achieved.
基于C -MOS设计，具有高度防止噪音讯号及低耗电量等特点。
Based on C-Mos design, high resistance to noise, signals and low power consumption can be achieved.
基于C -MOS设计，具有高度防止噪音讯号及低耗电量等特点。
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