A first embodiment of the present invention includes an NMOS transistor, a PMOS transistor, and a bipolar transistor formed on different areas of the substrate.
于本发明第一实施例中包括一nmos晶体管、一pmos与一双极晶体管形成于基底的不同区域。
A first embodiment of the present invention includes an NMOS transistor, a PMOS transistor, and a bipolar transistor formed on different areas of the substrate.
于本发明第一实施例中包括一nmos晶体管、一pmos与一双极晶体管形成于基底的不同区域。
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