This method would be very helpful to the design of practical plasma source ion implantation processes.
这一分析方法对实际等离子体源离子注入应用具有重要的指导作用。
A new large area microwave plasma source has been developed.
研制了一种新的大面积微波等离子体源。
The design method for space plasma source and measurement system is introduced in this paper.
文章介绍了空间等离子体源与测试系统的设计方法。
Diamond films had been deposited on quartz tube with the gas mixture of ethanol steam and hydrogen by the plasma source.
使用该等离子体源以乙醇蒸汽和氢气为气源在石英玻璃管外表面沉积金刚石膜。
The silicon thin films on glass substrate were prepared using microwave ECR plasma source enhanced magnetron sputtering.
利用微波ecr等离子体增强磁控溅射沉积技术在玻璃表面制备了硅膜。
The ultrashort pulse laser plasma source works in ultrashort time, with high energy density and is able to be tuned, controlled easily.
超短脉冲激光等离子体源作用时间超短，能量密度高，可调谐，易于控制。
A microwave three probe system has been used to study the changes of annular waveguide plasma source impedance with operational parameters.
采用微波三探针研究了环形波导等离子体源阻抗特性随运行参数的变化。
Owing to the enlarging of scale, components of plasma source no longer match with each other, resulting in performance descending, high energy cost and more frequent maintenance.
由于尺度放大，氧等离子体源各组件间会出现失配现象，直接导致系统性能差、能耗高、维护任务重。
This plasma source has been used for modifying the surface of soybean fiber. Experimental results indicate that the performances of the treated fiber have obviously been improved.
从扫描电镜等测试结果显示，改性后大豆纤维的表面性能有明显改善。
The plasma source ion implantation device consists of pulsed negative high voltage power, hot cathode arc discharge system, vacuum chamber and target stage, vacuum system and monitor system.
等离子体源离子注入装置由脉冲负高压源系统、热阴极弧放电系统、真空室及样品台、真空系统和监测系统等五部分组成。
It comprises transport of activated gas from a remote plasma source to an area in the chamber in a uniform way through at least two injection points on equivalent paths for the reactive species.
所述方法包括通过至少两个注射点且在用于反应性物质的等同路径上以均匀的方式将被活化的气体从远程等离子体源输送至所述室中的区域。
Plasma source ion implantation is a new non-line of sight ion implantation technique for surface modification of materials.
等离子体源离子注入技术是一种新型的非视线的离子注入材料表面改性技术。
Plasma source ion implantation is a new non-line of sight ion implantation technique for surface modification of materials.
等离子体源离子注入技术是一种新型的非视线的离子注入材料表面改性技术。
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