Plasma source ion implantation is a new non-line of sight ion implantation technique for surface modification of materials.
等离子体源离子注入技术是一种新型的非视线的离子注入材料表面改性技术。
Mssbauer measurements have been carried out for pure iron powder samples, the whose surface was implanted with nitrogen ions by plasma source ion implantation techniques.
采用等离子体源离子注入方法，将氮离子注入纯铁粉中，对样品进行穆斯堡尔谱研究。
In this paper, a glow discharge plasma source ion implantation technique is described.
本文叙述了辉光放电等离子体源的等离子体源离子注入。
This method would be very helpful to the design of practical plasma source ion implantation processes.
这一分析方法对实际等离子体源离子注入应用具有重要的指导作用。
The plasma source ion implantation device consists of pulsed negative high voltage power, hot cathode arc discharge system, vacuum chamber and target stage, vacuum system and monitor system.
等离子体源离子注入装置由脉冲负高压源系统、热阴极弧放电系统、真空室及样品台、真空系统和监测系统等五部分组成。
IS-A type 10cm duopigatron ion source that was made for heating plasma In the HT-6M Tokamak has high current, high power and high proton composition.
为加热HT-6M托卡马克等离子体而研制的IS-A十厘米双潘宁离子源具有强流、大功率、高质子比等特点。
This article reviews the basic physics of ECR discharge and experimental research, and describes new applications of ECR plasma in surface processing, plasma coating and ion source.
本文综述了ECR放电的基本物理过程和实验研究概况，介绍了ECR等离子体在表面处理、镀膜和离子源等方面应用的最新结果。
This invention is a chromatographic detector in which the ion source is a microwave plasma torch.
本发明是用微波等离子体矩作电离源的一种新型离子化色谱检测器。
It was used to predict the beam optical performance of an extraction system for a surface-plasma bucket negative ion source.
对表面-等离子体型桶式负离子源引出系统束光学的性质进行了数值模拟。
Optical thin film properties deposited using the adapted high ion current plasma source are likewise described.
最后描述了利用高离子电流密度等离子体镀膜的光学薄膜。
The invention relates to an ion implanter (imp) comprising a pulsed plasma source (SPL), a substrate support plate (PPS) and a power supply (ALT) for said plate.
本发明涉及离子注入机imp，包括脉冲等离子体源spl、衬底支承台PPS和所述台的电源alt。
The invention relates to an ion implanter (imp) comprising a pulsed plasma source (SPL), a substrate support plate (PPS) and a power supply (ALT) for said plate.
本发明涉及离子注入机imp，包括脉冲等离子体源spl、衬底支承台PPS和所述台的电源alt。
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