When the external RF frequency is much bigger than ion plasma frequency, ions answer average field.
当外加射频频率远大于离子等离子体频率，离子响应平均场，离子的密度分布几乎不随时间变化；
The pass band of this mode is from static to plasma frequency, and does not depend on structure dimension.
这一模式的通带从零到等离子体频率，而且不依赖于结构尺寸。
However, phase speed depends on plasma frequency and structure dimension, and very slow waves can exist in very small sized waveguide.
然而，波的相速依赖于等离子体频率和结构尺寸，并且非常慢的波可以存在于非常小尺寸的波导中。
It has been shown that when the RF frequency is less than the ion plasma frequency, the ion flux density will strongly depend on the time.
结果表明，当射频场的频率小于或等于离子等离子体频率时，离子流密度明显地随时间变化。
Because of their inertia, the electrons will overshoot and oscillate around their equilibrium positions with a characteristic frequency known as the plasma frequency.
因为电子的惯性，它们将冲过平衡位置，并以特征频率围绕它们的平衡位置振荡。
As the nitrogen partial pressure increases, the variation of color coordinate is caused by decrease of free electrons number of the films and decrease of plasma frequency.
发现颜色坐标的变化是由于随氮分压增加，自由电子浓度降低引起等离子体频率降低造成的。
In this paper, the effects of critical electron density of plasma and the plasma frequency of electron on the refraction, absorption and reflection of the electromagnetic wave are studied.
着重研究了等离子体临界电子密度、电子等离子体频率等参数对电磁波的折射、吸收、反射的影响。
The effect of plasma thickness, wave frequency, electron number density distribution on it is almost independent of the wave polarizing direction.
等离子体厚度、入射波频率、电子数密度分布对功率反射系数的影响几乎与波的极化方向无关。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
This paper discussed the dependence of the characteristic value of characteristic equation on frequency for the given precise characteristic equations of plasma cylindrical waveguides.
通过给出的等离子体圆柱波导的精确特征方程，讨论了特征方程的特征值对频率的依赖。
The designing parameters of high frequency transformer and the protecting IGBT in plasma spraying inverter with high voltage and large current is analyzed in this paper.
分析了等离子喷涂逆变器在高电压大电流条件下，高频变压器参数设计和IGBT保护问题。
B solution, the function of wave attenuation, wave frequency and plasma density is deduced.
解，推导出电磁波能量衰减与电磁波频率和等离子体密度的关系式。
Therefore, plasma etching anisotropy can be improved by increasing rf frequency or rf-bias power.
因此，等离子体刻蚀的各向异性可以通过增加射频频率和射频功率来改善。
Finally, the optimal electron collision frequency of the non-magnetized plasma is presented.
最后，给出了非磁化等离子体的最佳碰撞频率。
The electron collision frequency is one of the important parameters of the non-magnetized plasma. It plays an important role in the interaction of the plasma with electromagnetic waves.
电子碰撞频率是非磁化等离子体的一个重要参数，它对等离子体与电磁波相互作用的性质具有较大影响。
The electronic collisional frequency and magnetic inductive intensity are important parameters of plasma for adjusting the reflectance.
等离子体的电子碰撞频率和磁感应强度是调节等离子体反射率的重要参量。
It is analyzed by numerical computation that the temporal growth rates and the frequency of PASOTRON are affected by the filling factor of plasma.
并通过数值计算分析了等离子体填充因子对PASOTRON的时间增长率及工作频率的影响。
Light emission from the plasma in laser welding of zinc-coated plates when there appeared pinhole in the weld were analysised on magnitude and frequency ranges.
对镀锌板激光拼焊过程中焊缝上出现孔洞时的等离子体光信号进行了幅域和频域分析。
To create plasma, they applied an oscillating (radio frequency) electric field to the gas using two disk-shaped electrodes located near the top and bottom of the chamber.
为了制造等离子体，他们还在容器上下两个表面安上了电极，加上了射频震荡电场。
A stable plasma in the mirror is produced by using microwave with magnetron at electron cyclotron frequency.
利用工作于电子回旋频率的磁控管发射的微波功率在磁镜中产生了稳定的等离子体。
Plasma chemical vapor deposition in silane radio frequency glow discharge is a main fabrication technology of hydrogenated amorphous silicon (a-Si: h) films.
射频辉光放电硅烷等离子体化学汽相沉积是制备氢化非晶硅薄膜的主要工艺技术。
For different plasma-density profiles, the effects of the frequency of EM wave, collisional frequency and plasma density on the attenuation of electromagnetic wave were discussed.
给出了等离子体电子密度线性分布和指数分布时，雷达电磁波的频率、电子碰撞频率、等离子体密度对电磁波衰减的影响。
The plasma microwave radiation, as a novel high power microwave(HPM) source, has gotten more attention in recent years for its merits of broadband, coherent emission and tunable frequency.
近年来，等离子体微波辐射作为新兴高功率微波源，因其具有频带宽、相干和可调谐等优点，因而受到国际上的广泛关注。
An inductively coupled plasma antenna, which is installed on a center of the dielectric window, transfers radio frequency power from an RF power supply to the interior of the processing chamber.
感应耦合等离子体触角安装在介电窗上以便定位在介电窗的中心上，并且将来自射频电源的射频功率传输到加工室内部。
Plasma was created by dielectric barrier discharge (DBD) system, which consisted of home-made middle frequency power supply and parallel plane electrode configurations.
等离子体的产生采用了自制中频电源和平行板电极结构组成的介质阻挡放电系统。
In this paper accurate solutions for the single frequency heating conditions have been obtained based on equations derived for laser plasma electron-ion coupling.
本文在导出激光等离子体电子、离子耦合方程的基础上求得了单频加热无穷行列特征矩阵的准确解；
The terrestrial ionospheric plasma can be heated by a powerful ground-based high-frequency radio wave, which results in the disturbance of the electron temperature and density.
地面入射的大功率无线电波能加热电离层等离子体，引起电离层电子温度和密度的扰动，实现电离层的地面人工变态。
Re melt deposit welding process is proposed in this paper. To realize the technology, plasma arc, TIG arc, high frequency induction, gas shield continuous stove and MSW are adopted.
提出熔敷焊接工艺方法，采用等离子弧、TIG电弧、高频感应、气保护连续炉、真空炉和模中熔铸工艺实现了熔敷焊接工艺方法。
Re melt deposit welding process is proposed in this paper. To realize the technology, plasma arc, TIG arc, high frequency induction, gas shield continuous stove and MSW are adopted.
提出熔敷焊接工艺方法，采用等离子弧、TIG电弧、高频感应、气保护连续炉、真空炉和模中熔铸工艺实现了熔敷焊接工艺方法。
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