The hydrogen plasma was excited by the technology of helicon-wave plasma chemical vapor deposition (HWP-CVD).
利用螺旋波等离子体化学气相沉积(HWP - CVD)技术，以氢气为反应气体产生等离子体。
Carbon nanotube films were synthesized on Ni substrate by microwave plasma chemical vapor deposition at low temperature.
以镍片为基板材料，利用微波等离子体化学气相沉积法在低温条件下合成了纳米碳管膜。
The globe-like diamond microcrystalline aggregates were fabricated by microwave plasma chemical vapor deposition (MPCVD) method.
以镍为催化剂，利用微波等离子体化学气相沉积法制备了弹簧状碳纤维。
Under the catalytic effect of nickel particles, spring-like carbon filaments were synthesized through microwave plasma chemical vapor deposition.
以镍为催化剂，利用微波等离子体化学气相沉积法制备了弹簧状碳纤维。
The experiment of the deposition of diamond thin films is made on silicon substrate by using microwave plasma chemical vapor deposition (CVD) system.
利用微波等离子体化学气相沉积(CVD)设备，在硅基片上进行了金刚石薄膜的沉积实验。
Plasma chemical vapor deposition in silane radio frequency glow discharge is a main fabrication technology of hydrogenated amorphous silicon (a-Si: h) films.
射频辉光放电硅烷等离子体化学汽相沉积是制备氢化非晶硅薄膜的主要工艺技术。
Diamond coatings were deposited on cemented carbide substrates with H2, CH4 and D4 as precursors by using microwave plasma chemical vapor deposition technique.
利用微波等离子体化学气相沉积方法，以H 2、CH4和八甲基环四硅氧烷(D4)为原料，在硬质合金基体上沉积了金刚石涂层。
Large current hot cathode glow discharge was used for plasma chemical vapor deposition of diamond films. It improved deposition rate and films quality efficiently.
大电流热阴极辉光放电用于等离子体化学气相沉积金刚石膜，有效地提高了沉积速率和膜品质。
The hydrogen and boron ion bombardments were performed by applying a negative bias voltage to the substrate during microwave plasma chemical vapor deposition process.
在微波等离子体化学气相沉积金刚石膜时，采用负偏压使氢和硼离子轰击金刚石膜表面。
The relation between characteristics of hot cathode glow discharge and diamond film deposition techniques in hot cathode glow discharge plasma chemical vapor deposition process was discussed.
研究了在热阴极辉光放电等离子体化学气相沉积金刚石膜过程中，热阴极辉光放电特性与金刚石膜沉积工艺的关系。
Smoothing, dense and uniform nano crystalline diamond like carbon films are prepared by using electron cyclotron resonance (ECR) microwave acetone plasma chemical vapor deposition (CVD) method.
利用电子回旋共振（ECR）微波等离子体辅助化学气相沉积技术、工作气氛为丙酮，在光学玻璃衬底上得到了光滑、致密、均匀的类金刚石薄膜。
A novel passivation technology of porous silicon (PS) surface, i. e. , depositing diamond film on the PS surface by microwave plasma assisted chemical vapor deposition (MPCVD) method, was developed.
提出了一种新颖的多孔硅表面钝化技术，即采用微波等离子体辅助的化学气相沉积（MPCVD）方法在多孔硅上沉积金刚石薄膜。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
Direct current hot cathode plasma glow discharge chemical vapor deposition (DC-HCPCVD) is a new method to deposit high quality diamond films with high growth rate.
直流热阴极辉光放电等离子体化学气相沉积法是我们建立的快速沉积高品质金刚石膜的新方法。
Plasma enhanced chemical vapor deposition (PECVD) technique is the primary method which is used to prepare hydrogenated silicon film.
等离子体化学气相沉积技术制备氢化硅薄膜工艺条件成熟稳定而成为薄膜制备的首选方法。
Silicon nitride thin films were prepared onto steel substrates by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique.
采用射频等离子体增强化学气相沉积法(RF - PECVD)在钢衬底上沉积氮化硅薄膜。
Plasma enhanced chemical vapor deposition (PECVD) is one of the matured and simple manipulated among the thin film deposition methods at low temperature.
等离子增强化学气相沉积(PECVD)是低温沉积硅膜的主要方法。
In a preferred embodiment, the codeposition is carried out by plasma enhanced chemical vapor deposition.
在较佳具体实施例中，该共沉积作用系以等离子体强化化学气相沉积法进行。
This article introduces processing of plasma chemistry and application of sputter coating and plasma-enhanced chemical vapor deposition in powder metallurgy especially.
介绍了等离子体化学工艺，特别着重介绍了溅射镀膜与等离子体化学气相沉积在粉末冶金中的应用。
Finally, annealing process is carried out in the electroplated metal layer formed by the electroplating process through chemical vapor deposition method under promotion of ammonia plasma.
之后，利用氨气等离子体促进化学气相沉积法对上述经电镀制程而形成的电镀金属层进行退火处理。
This paper gives an overview of plasma enhanced chemical vapor deposition used in the solar industry.
本文针对电浆辅助化学气相沉积在太阳能产业上的应用作一概略性的介绍。
SiN thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) under various power and pressure conditions.
利用等离子体增强化学气相沉积（PECVD）工艺，在不同射频功率，不同反应气压条件下制备了氮化硅薄膜。
Without doping, plasma enhanced chemical vapor deposition (PECVD) of silica films on si substrates with gas mixtures of SiH_4 and N_2O is considered.
以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积(PECVD)技术，不使用掺杂，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。
Microcrystalline silicon thin films prepared at different deposition parameters using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
Microcrystalline silicon solar cells with the variation of silane concentration (SC) and discharge power were fabricated by very high frequency plasma-enhanced chemical vapor deposition.
采用甚高频等离子体增强化学气相沉积技术成功地制备了不同硅烷浓度和辉光功率条件下的微晶硅电池。
Reverse dispersion fiber (RDF) with depressed-core index profile is fabricated successfully by using plasma-activated chemical vapor phase deposition.
利用非等温等离子体化学气相沉积成功制得了具有折射率中心下陷的负色散光纤(rdf)。
The results show: the amorphous hydrogenated carbon film can be fabricated on PET surface by plasma-enhanced chemical vapor deposition.
研究结果表明：用射频等离子体增强化学气相沉积法，可以在PET上沉积厚度为纳米至微米级的非晶碳氢膜。
The technical advantages of vacuum plasma spray over conventional chemical vapor deposition(CVD) and air plasma spray in tungsten coating were also discussed.
和CVD方法以及常压等离子体喷涂方法制备的钨涂层相比，低压等离子体喷涂具有明显的优势。
In this paper, prevailing TBC deposition technologies, including plasma spray, electron beam-physical vapor deposition, ion beam assisted film deposition and chemical vapor deposition, are reviewed.
综述了热障涂层研究及应用中的几种主要制备技术，包括等离子喷涂、电子束物理气相沉积、离子束辅助沉积、化学气相沉积等。
The optical part can be done by applying Electron Beam Lithography (EBL), Inductively Coupled Plasma (ICP) etching, and Plasma-enhanced Chemical Vapor Deposition (PECVD).
利用电子束光刻、等离子体增强化学气相沉积、感应耦合等离子体刻蚀来实现跑道型微环谐振器的制备；
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