The plasma is a high energy and high activity material, it has good etching effect for any organic material, which in recent years has also been referenced to the printed circuit board manufacturing.
由于等离子体是一种具有很高能量和极高活性的物质，它对于任何有机材料等都具有良好的蚀刻作用，因而在最近几年也被引用到印制电路板制造中来。
In this paper, the result of etching application with microwave plasma will be introduced.
本文介绍微波等离子体刻蚀应用的实验结果。
Principles of microwave ECR plasma technology are introduced briefly. Present development of it'S research and applications in system manufacturing, CVD, PVD and etching is reviewed.
本文简要介绍了微波ECR等离子体技术的原理，评述了近年来这种技术在CVD、PVD、刻蚀等方面的研究和应用的进展。
The optical emission spectrum of r. f. plasma during amorphous silicon based film etching in CF4 gas is detected.
用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。
The effects of etching electrode with argon and oxygen plasmas in advance on the preparation of argon plasma polymerized vinylferrocene film electrode were compared.
本文对比了用氩等离子体和氧等离子体预刻蚀电极的情况，认为在电极表面是否有含氧基团存在对氩等离子体聚合制备修饰电极影响不大。
High aspect ratio structures have been successfully fabricated by plasma cryo-etching on silicon wafers.
等离子体低温刻蚀是一种针对高深宽比结构的干法刻蚀技术。
The electronics industry uses it in plasma and thermal cleaning applications for its advantages such as high etch rates, high selectivity, carbon-free etching, and minimal residual contamination.
由于它的优点，如高蚀刻率、高选择性、无碳蚀刻和最小限度的残留污染，电子工业把它用在等离子和热清洁应用中。
Regular textured silicon surfaces with various shape and different geometrical parameters were successfully designed and prepared using inductively coupled plasma (ICP) etching technology.
采用感应耦合等离子体刻蚀技术实现了不同形状和几何参数的规则织构化硅片表面的构筑与制备。
The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching.
通过深紫外光刻和感应耦合等离子刻蚀设备，制备了所设计的器件。
Some binary optical elements were manufactured by parallel direct writing and inductive couple plasma etching technology.
利用并行直写技术与感应耦合等离子刻蚀技术制作了部分二元光学元件。
Therefore, plasma etching anisotropy can be improved by increasing rf frequency or rf-bias power.
因此，等离子体刻蚀的各向异性可以通过增加射频频率和射频功率来改善。
The results show that the etching rate depends strongly on plasma composition and the RF bias voltage, but rather weakly on the gas flow rate.
结果表明刻蚀气体的组分和射频偏压对刻蚀速率有较大影响，而气体流量影响不大。
We fabricate desired structured surfaces by holographic lithography, plasma etching and Teflon coating. The performance is evaluated by measuring the reflectance spectrum and contact angle.
实验上，我们采用全像微影术、电浆蚀刻以及旋镀铁氟龙的方式来制作试片，并量测该试片的反射频谱和接触角。
Yak hairs were treated by the microwave electron cy cl otron resonance plasma reactive ion etching(ECR-RIE) equipment to improve its property of weave.
采用微波电子回旋共振等离子体反应离子刻蚀（E CR-R IE）装置对牦牛毛纤维进行表面改性，从而改善牦牛毛的可纺性。
A technology based on plasma etching has been developed to produce antireflective surface structures.
提出一种基于等离子体刻蚀的技术，形成减反射表面结构。
The etching of CVD diamond thick films was accomplished by the ECR plasma under optimized pressure conditions and the etching mechanism is studied.
利用该等离子体在优化的气压条件下对化学气相沉积金刚石膜进行了刻蚀， 并研究了刻蚀机理。
The optical part can be done by applying Electron Beam Lithography (EBL), Inductively Coupled Plasma (ICP) etching, and Plasma-enhanced Chemical Vapor Deposition (PECVD).
利用电子束光刻、等离子体增强化学气相沉积、感应耦合等离子体刻蚀来实现跑道型微环谐振器的制备；
The optical part can be done by applying Electron Beam Lithography (EBL), Inductively Coupled Plasma (ICP) etching, and Plasma-enhanced Chemical Vapor Deposition (PECVD).
利用电子束光刻、等离子体增强化学气相沉积、感应耦合等离子体刻蚀来实现跑道型微环谐振器的制备；
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