Minority carrier lifetime is an important parameter for PIN diodes.
少子寿命是PIN二极管的重要参数。
Experiment gives out that the failure threshold of the Si PIN diodes is 1.
实验得到硅pin光电二极管的失效阈值为1。
A few methods are introduced at home and abroad on producing PIN diodes: diffusion, ion implantation, and epitaxial.
国内外制备PIN二极管主要采用离子注入方法，扩散方法，外延方法。
It is shown that choosing LM317 to be the manostat, the PIN diodes to be the photodetector, and the I-V transformation to be the connective mode, the designing index can be fulfilled.
测试结果表明：选择LM 317作稳压器，PIN光电二极管作探测器，采用I V光电转换连接光电探测器与放大器的方式，可以满足设计要求。
The results of test indicate that the reverse recovery softness of the diodes is increased to about 1.0, and is more improved than the conventional PIN diode.
实验结果表明，该二极管的反向恢复软度因子提高到了1.0左右，较传统的PIN二极管有了较大改善。
In this paper, an optical interconnection data link for PCI bus parallel interconnect has been designed and implemented using semiconductor laser diodes and PIN photo detectors.
本文采用半导体激光器和PIN光电探测器，设计和实现了用于计算机PCI总线并行互连的光互连链路。
In this paper, an optical interconnection data link for PCI bus parallel interconnect has been designed and implemented using semiconductor laser diodes and PIN photo detectors.
本文采用半导体激光器和PIN光电探测器，设计和实现了用于计算机PCI总线并行互连的光互连链路。
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