The external circuit current of photoinjection in MOS structures is closely related to the capture cross section of traps.
MOS结构中光注入时外电路电流特性与绝缘膜中陷阱俘获截面密切相关。
The external circuit current of photoinjection in MOS structures is closely related to the capture cross section of traps.
MOS结构中光注入时外电路电流特性与绝缘膜中陷阱俘获截面密切相关。
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