The invention relates to a phase change memory.
本发明有关于一种相变化存储器。
Related one-time programmable devices, phase change memory devices and electronic systems are also disclosed.
还公 开了相关的一次可编程器件、相变存储器件和电子系统。
A phase change memory formed by a plurality of phase change memory devices having a chalcogenide memory region (28) extending over an own heater (26).
一种由多个具有在自身的加热体(26)上方延伸的硫属化物存储区(28)的相变存储器件形成的相变存储器。
Disclosed herein are a method of forming a stable phase change layer without generating seams, and a method of manufacturing phase change memory device using the same.
本文公开了一种形成不产生接缝的稳定的相转变层的方法以及制造使用所述相转变层的相转变存储器件的方法。
Disclosed herein are a method of forming a stable phase change layer without generating seams, and a method of manufacturing phase change memory device using the same.
本文公开了一种形成不产生接缝的稳定的相转变层的方法以及制造使用所述相转变层的相转变存储器件的方法。
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