A method for improving the critical dimension uniformity of a patterned feature on a wafer in semiconductor and mask fabrication is provided.
一种在半导体与罩幕制造中改善晶圆上的图案化特征结构的临界尺寸均匀性的方法。
When configured as a Dual probe system, the 413 also provides measurements of total thickness of the wafer, including substrate thickness and the patterned height thickness.
如果设计成双探针系统，413也可以提供硅片总厚度，包括基板厚度和图案高度厚度的测量；
When configured as a Dual probe system, the 413 also provides measurements of total thickness of the wafer, including substrate thickness and the patterned height thickness.
如果设计成双探针系统，413也可以提供硅片总厚度，包括基板厚度和图案高度厚度的测量；
应用推荐