LED is the core of the P-type semiconductor and components of the N-type semiconductor chips.
发光二极管的核心部分是由P型半导体和N型半导体组成的晶片。
Analysis and calculation to structure of new small size P-type pintle injection nozzle was introduced.
并介绍了采用有限元法对新型小尺寸P系列轴针式喷油嘴结构进行的分析计算。
Effects of source box, vacuum shell, dead layer and P-type wick in the calculation are considered in detail.
计算中仔细考虑了源盒、真空壳、死层及P型芯等的影响。
Therefore P-type doped polyacetylene is considerably stable in some concentrated aqueous solutions of electrolytes.
因而P -型掺杂的聚乙炔在水溶液中是相当稳定的。
In practical use, an N-type and a P-type are created side by side in the same semi-conductor Crystal, forming a P-N junction.
在p型和n型半导体材料之间渡越区中的一个面，在这里施主杂质和受主杂质的浓度相等。
In this case, as the P-type and N-type materials, any material generally preferably used for thermoelectric pairs can be used.
在这种情况下，作为P型和N型材料，可以使用通常优选地用于热电偶的任何材料。
The Cobalt electrode does not show photoresponse in the positive scan while it shows P-type photoresponse in the negative scan.
纯钴电极电位正向扫描时不显示光响应，负向扫描时显示阴极光电流。
In this paper, the problem on the stable region of the motion of P-type retrograde minor bodies in the solar system is discussed.
本文讨论了太阳系P型逆行小天体运动的稳定区域问题。
He found that producing p-type gallium nitride, which made use of ammonia at high temperatures, trapped hydrogen atoms inside the crystal.
他发现在生成p型氮化镓的时候需要利用高温氨，以致于把氢原子引入了晶体之中。
P-type semiconductor zinc oxide films, process for preparation thereof, and pulsed laser deposition method using transparent substrates.
型半导体氧化锌薄膜，其制备方法，和使用透明基片的脉冲激光沉积方法。
Gallium nitride turned out to be difficult to grow without defects, and although n-type gallium nitride could be made easily, p-type could not.
氮化镓最终被发现很难做到没有瑕疵，即使n型氮化镓很容易被造出，p型却不然。
The smallest unit that supports electron flow in a semiconductor material ; a hole in P-type silicon or a free electron in N-type silicon.
多数载流子-一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
In the late 1980s Isamu Akasaki and his colleagues at Nagoya University created the first p-type gallium nitride by incorporating tiny amounts of magnesium.
20世纪80年代后叶akasaki和他的同事们在名古屋大学通过添加少许镁制造出首例p型氮化镓。
Taking account of the disadvantage of current P-type impurity diffusion technology, an open tube gallium-aluminium diffusion technology is investigated.
就现行P型杂质扩散工艺的不足，进行了开旮铝镓掺杂技术的研究。
In this paper, theories of ZnO film p-type doping are introduced in several aspects, including self-compensation effect, madelung energy, and thermodynamics.
本文分别从自补偿效应，马德隆能以及热力学等角度介绍了氧化锌薄膜的p型掺杂的理论研究。
P-type transition of ZnO film has recently attracted considerable interest due to its potential applications. Diverse methods have been researched by many people.
近来氧化锌薄膜的p型转化研究是一个热点，人们尝试了不同的方法来实现。
As transistors get smaller, however, laying down n-type and p-type materials in proximity gets harder, thanks once again to fluctuations in the concentrations of dopants.
然而，晶体管越小，制造PN结的难度就越大，这也是受到了掺入元素浓度波动的影响。
Laser is used as active light source for the first time in photoeleotrochemioal image deposition on P-type silicon substrate, and pictures with clear structures are obtained.
本文首次用激光作激励光源，在P型硅片上成功地进行了光电化学成像沉积，得到层次清晰的图像。
Both P-type and N-type crystalline si have been doped using arsenic, phosphor and boron. The electrical and opto-electrical characteristics of the doping area are investigated.
型和N型两种硅单晶进行了砷、磷和硼的掺杂，并研究了掺杂区的电和光电特性。
At the junction where the two layers meet, electrons pair up with holes, establishing an electric field that prevents electrons from moving from the n-type material to the p-type.
两层接触处电子与“孔”便成双配对地形成了电场，阻止电子从n层移到的p层。
Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology.
采用过滤阴极真空电弧技术并施加一定的衬底负偏压，在P（100）单晶硅片上制备出四面体非晶碳薄膜。
An external circuit provides a path for the electrons to return to the p-type material, producing an electric current along the way that continues as long as light strikes the solar cell.
此时接上一条外线电路，电子便通过线路流动到p层。只要光束持续地撞击太阳能电池，就会有持续的电流。
The P-type conductive transparent oxide film obtained by the method of the invention has better application prospect in the fields of transparent electronics and novel photoelectric devices.
本发明方法获得的P型导电透明氧化物薄膜在透明电子学和新型光电器件领域具有较好的应用前景。
By compensating with P-type bootstrapped switch, this circuit can overcome nonlinear distortion, which is generally introduced by signal-dependent on-resistance, and improve sampling resolution.
采用P型栅压自举开关补偿技术，可以有效地克服采样管导通电阻变化引入的非线性失真，提高采样精度。
The results show that n-type silicon piezoresistors should be long while p-type silicon piezoresistors should be short and placed in the root of the microcantilever to obtain higher sensitivities.
结果表明：为获得较高灵敏度，n型硅压阻应做长，p型硅压阻应做短并安排在固定端。
But it should be stressed that the conductivity decay of P-type doped polyacetylene can be significantly suppressed by immersion of the doped polyacetylene film in some concentrated aqueous solutions.
但是需要强调的是P -型掺杂的聚乙炔的比电导的衰变会由于掺杂的聚乙炔插在某些浓的水溶液中而得到有效的抑制。
Compared with the above two ILCs, the convergence condition of P-type ILC is much stricter and its robustness is worse. Besides, convergence speed of P-type ILC is much slower than that of D-type ILC.
与这两种迭代学习控制相比，P型迭代学习控制的收敛条件更加严苛，收敛性和鲁棒性较差，而且收敛速度比以上两种控制方法要慢得多。
P is the type of the file to represent pipe.
p是文件的类型，表示PIPE。
So let's quickly talk about our last type of hybridization that we're going to discuss today, which is s p hybridization.
我们今天要讨论的最后一个类型的杂化,也就是sp杂化。
The letter preceding the greater-than symbol indicates the type of the object stored (t=triplet, p=pair, i=integer, l=ArrayList, and so on).
大于号之前的字母代表存储对象的类型（t=triplet，p=pair，i=integer，l=ArrayList，等）。
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